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Datasheet IRG4PSC71U Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1IRG4PSC71UINSULATED GATE BIPOLAR TRANSISTOR

PD - 91681A IRG4PSC71U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimu
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transistor
2IRG4PSC71UDINSULATED GATE BIPOLAR TRANSISTOR

PD - 91682A IRG4PSC71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations • IGBT co-packaged with HEXFRED ultrafa
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transistor
3IRG4PSC71UDPBFINSULATED GATE BIPOLAR TRANSISTOR

PD- 95895 IRG4PSC71UDPbF • Lead-Free www.irf.com 1 09/13/04 IRG4PSC71UDPbF 2 www.irf.com IRG4PSC71UDPbF www.irf.com 3 IRG4PSC71UDPbF 4 www.irf.com IRG4PSC71UDPbF www.irf.com 5 IRG4PSC71UDPbF 6 www.irf.com IRG4PSC71UDPbF www.irf.com 7 IRG4PSC71UDPbF 8 www.irf.com IRG4PSC71U
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transistor
4IRG4PSC71UPBFINSULATED GATE BIPOLAR TRANSISTOR

• Lead-Free PD- 95909 IRG4PSC71UPbF www.irf.com 1 09/20/04 IRG4PSC71UPbF 2 www.irf.com IRG4PSC71UPbF www.irf.com 3 IRG4PSC71UPbF 4 www.irf.com IRG4PSC71UPbF www.irf.com 5 IRG4PSC71UPbF 6 www.irf.com IRG4PSC71UPbF www.irf.com 7 IRG4PSC71UPbF Case Outline and Dimensions — Super-247
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transistor


IRG Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1IRG41BC10UDPBFInsulated Gate Bipolar Transistor

PD - 95603 IRG4IBC10UDPbF • Lead-Free www.irf.com 1 7/28/04 IRG4IBC10UDPbF 2 www.irf.com IRG4IBC10UDPbF www.irf.com 3 IRG4IBC10UDPbF 4 www.irf.com IRG4IBC10UDPbF www.irf.com 5 IRG4IBC10UDPbF 6 www.irf.com IRG4IBC10UD
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transistor
2IRG41BC30UDUltra Fast CoPack IGBT

PD91753A IRG4IBC30UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • IGBT co-p
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igbt
3IRG4BC10KShort Circuit Rated UltraFast IGBT

PD - 91733A IRG4BC10K INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3
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igbt
4IRG4BC10KDINSULATED GATE BIPOLAR TRANSISTOR

PD -91734B IRG4BC10KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed •
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transistor
5IRG4BC10KDPBFHEXFET Power MOSFET

PD -94903 IRG4BC10KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Short Circuit Rated UltraFast IGBT VCES = 600V • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losse
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mosfet
6IRG4BC10SINSULATED GATE BIPOLAR TRANSISTOR

PD - 91786A IRG4BC10S INSULATED GATE BIPOLAR TRANSISTOR Features • Extremely low voltage drop; 1.1V typical at 2A • S-Speed: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz in Chopper Applications �
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transistor
7IRG4BC10SD-LINSULATED GATE BIPOLAR TRANSISTOR

PD - 94255 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. • Very Tight Vc
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transistor



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