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PDF FDZ493P Data sheet ( Hoja de datos )
| Número de pieza | FDZ493P | |
| Descripción | P-Channel 2.5V Specified PowerTrench BGA MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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November 2006
FDZ493P
P-Channel 2.5V Specified PowerTrench® BGA MOSFET
–20V, –4.6A, 46mΩ
tm
Features
General Description
Max rDS(on) = 46mΩ at VGS = –4.5V, ID = –4.6A
Max rDS(on) = 72mΩ at VGS = –2.5V, ID = –3.6A
Occupies only 2.25 mm2 of PCB area. Less than 50% of the
area of SSOT-6.
Ultra-thin package: less than 0.80 mm height when mounted
to PCB.
Outstanding thermal transfer characteristics:4 times better
than SSOT-6.
Ultra-low Qg x rDS(on) figure-of-merit.
Combining Fairchild's advanced 2.5V specified PowerTrench®
process with state of the art BGA packaging process, the
FDZ493P minimizes both PCB space and rDS(on). This BGA
MOSFET embodies a breakthrough in packaging technology
which enables the device to combine excellent thermal transfer
characteristics, high current handing capability,ultra-low profile
packaging, low gate charge, and low rDS(on).
Application
Battery management
Load switch
RoHS Compliant.
Battery protection
GATE
BOTTOM
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S
G
D
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Parameter
TA = 25°C
PD
TJ, TSTG
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
E
Device
FDZ493P
Reel Size
7’’
(Note 1a)
(Note 1a)
Ratings
–20
±12
–4.6
–10
1.7
–55 to +150
Units
V
V
A
W
°C
(Note 1a)
72
°C/W
Tape Width
8mm
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDZ493P Rev.B(W)
1
www.fairchildsemi.com
1 page  
Dimensional Pad and Layout
FDZ493P Rev.B(W)
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDZ493P.PDF ] | |
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