|
|
PDF MMBT2132T3 Data sheet ( Hoja de datos )
| Número de pieza | MMBT2132T3 | |
| Descripción | (MMBT2132T1 / MMBT2132T3) General Purpose Transistors | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MMBT2132T3 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
MOTOROLA
www.DataSheet4U.com
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT2132T1/D
Product Preview
General Purpose Transistors
NPN Bipolar Junction Transistor
(Complementary PNP Device: MMBT2131T1/T3)
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
Base Current
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance — Junction to Ambient (1)
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance — Junction to Ambient (2)
Operating and Storage Temperature Range
VCEO
VCBO
VEBO
IC
IB
PD
PD
Rq JA
PD
PD
Rq JA
TJ, Tstg
Value
30
40
5.0
700
350
342
178
366
665
346
188
– 55 to +150
Unit
V
V
V
mA
mA
mW
mW
°C/W
mW
mW
°C/W
°C
MMBT2132T1
MMBT2132T3
0.7 AMPERES
30 VOLTS — V(BR)CEO
342 mW
65
4
1
23
CASE 318 F– 02, STYLE 2
SC–59 — 6 Lead
BASE
PIN 6
COLLECTOR
PINS 2, 5
EMITTER
PIN 3
NPN
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector – Base Breakdown Voltage
(IC = 100 m Adc)
Collector – Emitter Breakdown Voltage
(IC = 10 mAdc)
Emitter–Base Breakdown Voltage
(IE = 100 m Adc)
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0 Adc)
(VCB = 25 Vdc, IE = 0 Adc, TA = 125°C)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0 Adc)
ON CHARACTERISTICS
V(BR)CBO
Vdc
40 — —
V(BR)CEO
Vdc
30 — —
V(BR)EBO
Vdc
5.0 — —
ICBO
m Adc
— — 1.0
— — 10
IEBO
m Adc
— — 10
DC Current Gain
(VCE = 3.0 Vdc, IC = 100 mAdc)
hFE
150 —
—
Collector – Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
—
— 0.25
Collector – Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
VCE(sat)
—
— 0.4
Base–Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
VBE(sat)
—
— 1.1
Collector–Emitter Saturation Voltage
(IC = 700 mAdc, VCE = 1.0 Vdc)
VBE(on)
—
— 1.0
1. Minimum FR–4 or G–10 PCB, Operating to Steady State.
2. Mounted onto a 2″ square FR–4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), Operating to Steady State.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Vdc
Vdc
Vdc
Vdc
Vdc
©MMoototorroollaa, IBncip. 1o9la98r Power Transistor Device Data
3–1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MMBT2132T3.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MMBT2132T1 | General Purpose Transistors |  ON |
| MMBT2132T1 | (MMBT2132T1 / MMBT2132T3) General Purpose Transistors | Motorola Semiconductors |
| MMBT2132T3 | General Purpose Transistors | ON |
| MMBT2132T3 | (MMBT2132T1 / MMBT2132T3) General Purpose Transistors | Motorola Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |