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Datasheet BF256A Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BF256A | N-Channel SIlicon FET | ETC | data |
2 | BF256A | VHF/UHF Amplifier(N-Channel/ Depletion) | Motorola Inc | amplifier |
3 | BF256A | N-Channel RF Amplifiers BF256A/BF256B/BF256C
BF256A/BF256B/BF256C
N-Channel RF Amplifiers
• This device is designed for VHF/UHF amplifiers. • Sourced from process 50.
1
TO-92
1. Gate 2. Source 3. Drain
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VDG VGS IGF PD TSTG Parameter Drain-Gate Voltage | Fairchild Semiconductor | amplifier |
4 | BF256A | JFET - General Purpose
BF256A
BF256A is a Preferred Device
JFET - General Purpose
N–Channel
N–Channel Junction Field Effect Transistor designed for VHF and UHF applications.
• • • •
http://onsemi.com
Low Cost TO–92 Type Package Forward Transfer Admittance, Yfs = 4.5 mmhos (Min) Trans | ON Semiconductor | data |
BF2 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BF20-601A | Diode, Rectifier American Microsemiconductor diode | | |
2 | BF200 | NPN TRANZYSTORY ETC data | | |
3 | BF2000 | Silicon N Channel MOSFET Tetrode BF 2000
Silicon N Channel MOSFET Tetrode Target data sheet • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz
3 4 2 1
VPS05178
Type BF 2000
Marking Ordering Code NDs Q62702-F1771
Pin Configuration 1=S 2=D 3 = G2 4 = G1
Package S Siemens Semiconductor Group mosfet | | |
4 | BF2000W | Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz) BF 2000W
Silicon N Channel MOSFET Tetrode Target data sheet • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz
3 4
2 1
VPS05605
Type
Marking Ordering Code Q62702-F1772
Pin Configuration 1=D 2=S 3 = G1 4 = G2
Package SOT-343
BF Siemens Semiconductor Group mosfet | | |
5 | BF200B | NPN High Frequency Transistors Bharat transistor | | |
6 | BF200B | IF / RF Amplifiers and Oscillators Advani amplifier | | |
7 | BF2030 | Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V) BF 2030
Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V
3 4 2 1
VPS05178
ESD: Electrostatic discharge sensitive device, observe handling precaution
Type BF 2030
Marking Ordering Code NEs Q62702-F1773
Pin Siemens Semiconductor Group mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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