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PDF STP12IE90F4 Data sheet ( Hoja de datos )
| Número de pieza | STP12IE90F4 | |
| Descripción | Emitter Switched Bipolar Transistor | |
| Fabricantes | ST Microelectronics | |
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STP12IE90F4
Emitter Switched Bipolar Transistor
ESBT® 900 V - 12 A - 0.083 Ω
General features
VCS(ON)
1V
IC
12A
RCS(ON)
0.083 W
■ High voltage / high current Cascode
configuration
■ Low equivalent on resistance
■ Very fast-switch up to 150 kHz
■ Squared RBSOA up to 900V
■ Very low Ciss driven by RG = 47Ω
■ Very low turn-off cross over time
Applications
■ Flyback SMPS for adapter
■ Flyback / forward SMPS for desktop
Description
The STP12IE90F4 is manufactured in Monolithic
ESBT Technology, aimed to provide best perfor-
mances in high frequency / high voltage applica-
tions.
It is designed for use in Gate Driven based topolo-
gies.
TO220FP-4L
Internal schematic diagrams
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Order codes
Part Number
Marking
STP12IE90F4
P12IE90F4
Package
TO220FP-4L
Packing
Tube
January 2007
Rev 2
1/11
www.st.com
11
1 page  
STP12IE90F4
Electrical characteristics
Table 3.
Symbol
Electrical characteristics
Parameter
Test Conditions
VCS(dyn)
Collector-source
dynamic voltage
(500ns)
VCS(dyn)
Collector-source
dynamic voltage
(1µs)
VCC =VClamp =400V
VGS =10V
IC = 6A
IB = 1.2A
tpeak =500ns
RG =47Ω
IBpeak = 6A (IC )
VCC =VClamp =400V
VGS =10V
IC = 6A
IB = 1.2A
tpeak =500ns
RG =47Ω
IBpeak = 6A (IC )
Min. Typ. Max. Unit
3.37 V
1.75 V
2.1 Electrical characteristics (curves)
Figure 1. DC current gain
Figure 2. Collector-source On voltage
Figure 3. Collector-source On voltage Figure 4. Base-source On voltage
5/11
5 Page 
STP12IE90F4
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