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PDF STP08IE120F4 Data sheet ( Hoja de datos )
| Número de pieza | STP08IE120F4 | |
| Descripción | Emitter Switched Bipolar Transistor | |
| Fabricantes | ST Microelectronics | |
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STP08IE120F4
Emitter Switched Bipolar Transistor
ESBT® 1200 V - 8 A - 0.10 Ω
Preliminary Data
General features
VCS(ON)
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0.8 V
IC
8A
RCS(ON)
0.10 W
■ High voltage / high current Cascode
configuration
■ Low equivalent on resistance
■ very fast-switch up to 150 kHz
■ Squared RBSOA up to 1200V
■ Very low Ciss driven by RG = 47Ω
■ Very low turn-off cross over time
Applications
■ Aux SMPS for three phase mains
Description
The STP08IE120F4 is manufactured in Monolithic
ESBT Technology, aimed to provide best perfor-
mances in high frequency / high voltage applica-
tions.
It is designed for use in Gate Driven based topolo-
gies.
TO220FP-4L
Internal schematic diagrams
Order codes
Part Number
Marking
STP08IE120F4
P08IE120F4
Package
TO220FP-4L
Packing
Tube
November 2006
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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STP08IE120F4
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 1. Output characteristics
Figure 2. DC current gain
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Figure 3. Collector-source On voltage Figure 4. Collector-source On voltage
Figure 5. Base-source On voltage
Figure 6. Base-source On voltage
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STP08IE120F4
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| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet STP08IE120F4.PDF ] | |
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