STD100NH02L-1 Datasheet PDF - ST Microelectronics
Part Number | STD100NH02L-1 | |
Description | N-CHANNEL POWER MOSFET | |
Manufacturers | ST Microelectronics | |
Logo | ||
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STD100NH02L
STD100NH02L-1
N-channel 24V - 0.0042Ω - 60A - DPAK - IPAK
STripFET™ II Power MOSFET
General features
Type
VDSSS
RDS(on)
STD100NH02L
STD100NH02L-1
24V
24V
<0.0048Ω
<0.0048Ω
1. Value limited by wire bonding
■ RDS(on) * Qg industry’s benchmark
■ Conduction losses reduced
■ Switching losses reduced
■ Low threshold device
ID
60A(1)
60A(1)
Description
This device utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology.
This is suitable fot the most demanding DC-DC
converter application where high efficiency is to
be achieved.
Applications
■ Switching application
3
1
DPAK
3
2
1
IPAK
Internal schematic diagram
Order codes
Part number
STD100NH02LT4
STD100NH02L-1
December 2006
Marking
D100NH02L
D100NH02L
Package
DPAK
IPAK
Rev 11
Packaging
Tape & reel
Tube
1/16
www.st.com
16
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STD100NH02L
Electrical characteristics
Table 5. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 10V, ID = 30A,
RG = 4.7Ω, VGS = 10V
Figure 13 on page 8
Min. Typ. Max. Unit
15 ns
200 ns
60 ns
35 47 ns
Table 6. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM
VSD(1)
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 30A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 60A,
di/dt = 100A/µs,
VDD = 15V, TJ = 150°C
Figure 15 on page 8
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
60 A
240 A
1.3 V
47 ns
58 µC
2.5 A
5/16
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Information | Total 16 Pages | |
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Part Number | Description | MFRS |
STD100NH02L-1 | The function is N-CHANNEL POWER MOSFET. ST Microelectronics | |
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