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What is UPC2711TB?

This electronic component, produced by the manufacturer "CEL", performs the same function as "SILICON MMIC WIDEBAND AMPLIFIER".


UPC2711TB Datasheet PDF - CEL

Part Number UPC2711TB
Description SILICON MMIC WIDEBAND AMPLIFIER
Manufacturers CEL 
Logo CEL Logo 


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BIPOLAR ANALOG INTEGRATED CIRCUITS
UPC2711TB, UPC2712TB
5 V, SUPER MINIMOLD
SILICON MMIC WIDEBAND AMPLIFIER
FEATURES
• HIGH DENSITY SURFACE MOUNTING:
6 pin super minimold or SOT- 363 package
• SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V
• WIDEBAND RESPONSE:
UPC2711TB: fu = 2.9 GHz TYP
UPC2712TB: fu = 2.6 GHz TYP
• POWER GAIN:
UPC2711TB: GP = 13 dB TYP
UPC2712TB: GP = 20 dB TYP
DESCRIPTION
The UPC2711TB and UPC2712TB are Silicon MMIC
Wideband Amplifiers manufactured using NEC's 20 GHz fT
NESATTM III silicon bipolar process. These devices are de-
signed for use as buffer amps in DBS tuners. The UPC2711/
12TB are pin compatible and have comparable performance
as the larger UPC2711/12T, so they are suitable for use as a
replacement to help reduce system size. These IC's are
housed in a 6 pin super minimold or SOT-363 package.
Stringent quality assurance and test procedure ensure
the highest reliability and performance.
TYPICAL PERFORMANCE CURVES
GAIN vs. FREQUENCY
25
UPC2712TB
20
15 UPC2711TB
10
5
0.5 1.0 1.5 2.0 2.5
3.0
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = +25 °C, VCC = 5.0 V, ZL = ZS = 50 W)
SYMBOLS
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
ICC Circuit Current (no signal)
GP Power Gain, f = 1 GHz
fU
ΔGP
PO(SAT)
Upper Limit Operating Frequency
(The gain at fU is 3 dB down from the gain at 100 MHz)
Gain Flatness, f = 0.1 GHz to 2.5 GHz
Maximum Output Level, f = 1 GHz, PIN = 0 dBm
NF Noise Figure, f = 1 GHz
RLIN
Input Return Loss, f = 1 GHz
RLOUT Output Return Loss, f = 1 GHz
ISOL
Isolation, f = 1 GHz
UNITS
mA
dB
GHz
dB
dBm
dB
dB
dB
dB
UPC2711TB
S06
MIN TYP MAX
9 12 15
11 13 16.5
2.7 2.9
±0.8
-2 +1
5 6.5
20 25
9 12
25 30
UPC2712TB
S06
MIN TYP MAX
9 12 15
18 20 23.5
2.2 2.6
±0.8
0 +3
4.5
9 12
10 13
28 33
6
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Date Published: June 22, 2005

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UPC2711TB equivalent
TYPICAL PERFORMANCE CURVES (TA = 25°C)
UPC2712TB
CURRENT vs. VOLTAGE
20
18
16
14
12
10
8
6
4
2
0
12
34
56
Voltage, VCC (V)
UPC2712TB
GAIN AND NOISE FIGURE vs.
FREQUENCY AND VOLTAGE
30
25
GS
20
VCC = 5.0 V
VCC = 5.5 V
15
NF
VCC = 4.5 V
10
VCC = 5.5 V VCC = 5.0 V
5
0.1 0.3
1.0
Frequency, f (GHz)
10
8
6
4
2
3.0
UPC2712TB
ISOLATION vs. FREQUENCY
0
VCC = 5.0 V
-10
-20
-30
-40
-50
0.1
0.3 1.0
Frequency, f (GHz)
3.0
UPC2711TB, UPC2712TB
UPC2712TB
CURRENT vs. TEMPERATURE
20
VCC = 5.0 V
18
16
14
12
10
8
6
4
2
0
-60 -40
-20 0 20 40 60
Temperature, TA (°C)
80 100
UPC2712TB
GAIN vs.
FREQUENCY AND TEMPERATURE
25
VCC = 5.0 V
-40°C +25°C
20
TA = +85°C
15
0.1
0.3 1.0
Frequency, f (GHz)
3.0
UPC2712TB
INPUT RETURN LOSS AND OUTPUT
RETURN LOSS vs. FREQUENCY
0
VCC = 5.0 V
-10 RLIN
-20
RLOUT
-30
-40
0.1
0.3 1.0
Frequency, f (GHz)
3.0


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Featured Datasheets

Part NumberDescriptionMFRS
UPC2711TThe function is 2.9 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT. NECNEC
UPC2711TBThe function is SILICON MMIC WIDEBAND AMPLIFIER. CELCEL

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