STB70NFS03L Datasheet PDF - ST Microelectronics
Part Number | STB70NFS03L | |
Description | N-channel Power MOSFET | |
Manufacturers | ST Microelectronics | |
Logo | ||
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STB70NFS03L
N-channel - 30V - 0.0075Ω - 70A D2PAK
STripFET™ Power MOSFET plus schottky rectifier
General features
Type
STB70NFS03L
Schottky
VDSS
30V
IF(AV)
3A
RDS(on)
<0.0095Ω
VRRM
30V
ID
70A
VF(MAX)
0.51V
Description
This product associates a Power MOSFET of the
third genaration of STMicroelectronics unique
“Single Feature Size” strip-based process and a
low drop schottky diode. The transistor shows the
best trade-off between on-resistance and gate
charge. Used as low side in buck regulators, the
product is the solution in terms of conduction
losses and space saving.
Applications
■ Switching application
3
1
D²PAK
Internal schematic diagram
Order codes
Part number
STB70NFS03L
Marking
B70NFS03L
Package
D²PAK
Packaging
Tape & reel
July 2006
Rev 9
1/13
www.st.com
13
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STB70NFS03L
Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
Test Conditions
VDD = 15V, ID = 35A,
RG = 4.7Ω, VGS = 5V
(see Figure 10)
VDD = 15V, ID = 35A,
RG = 4.7Ω, VGS = 5V
(see Figure 10)
Min. Typ. Max Unit
22 ns
165 ns
21 ns
25 ns
Table 8. Source drain diode
Symbol
Parameter
Test Conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 70A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 70A, di/dt = 100A/µs
VDD = 20V, Tj = 150°C
(see Figure 15)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ. Max. Unit
70 A
280 A
1.3 V
42 ns
52 nC
2.5 A
5/13
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