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PDF SP8M21 Data sheet ( Hoja de datos )
| Número de pieza | SP8M21 | |
| Descripción | 4V Drive Nch + Pch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Transistors
4V Drive Nch+Pch MOSFET
SP8M21
SP8M21
zStructure
Silicon N-channel MOSFET /
Silicon P-channel MOSFET
zFeatures
1) Low on-resistance.
2) Built-in G-S protection diode.
3) Small and surface mount package (SOP8).
zApplications
Switching
zDimensions (Unit : mm)
SOP8
5.0
0.4
(8) (5)
1.75
1pin mark
(1)
1.27
(4)
0.2
Each lead has same dimensions
zPackage specifications
Type
SP8M21
Package
Code
Basic ordering unit (pieces)
Taping
TB
2500
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
zInner circuit
(8) (7) (6) (5)
∗2 ∗2
∗1 ∗1
(1) (2) (3) (4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
Limits
Tr1 : N-ch Tr2 : P-ch
45 −45
20 −20
±6.0
±4.0
±24 ±16
1.0 −1.0
24 −16
2.0
1.4
150
−55 to +150
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
°C
°C
Rev.A 1/7
1 page  
Transistors
1000
100 VGS=4.0V
VGS=4.5V
VGS=10V
10
Ta=25°C
Pulsed
1
0.01 0.1 1 10
DRAIN CURRENT : ID (A)
Fig.10 Static Drain-Source On-State
Resistance vs. Drain Current (Ι )
SP8M21
Rev.A 5/7
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SP8M21.PDF ] | |
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