STU100N3LF3 Datasheet PDF - ST Microelectronics
Part Number | STU100N3LF3 | |
Description | N-channel Power MOSFET | |
Manufacturers | ST Microelectronics | |
Logo | ||
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STD100N3LF3
STU100N3LF3
N-channel 30V - 0.0045Ω - 80A - DPAK - IPAK
Planar STripFET™ II Power MOSFET
General features
Type
VDSSS RDS(on) ID Pw
STD100N3LF3 30 V <0.0055 Ω 80 A(1) 110 W
STU100N3LF3 30 V <0.0055 Ω 80 A(1) 110 W
1. Current limited by package
■ 100% avalanche tested
■ Logic level threshold
Description
This Power MOSFET is the latest refinement of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics, low gate charge and less critical
alignment steps therefore a remarkable
manufacturing reproducibility. This new improved
device has been specifically designed for
Automotive application and DC-DC converters.
3
1
DPAK
3
2
1
IPAK
Internal schematic diagram
Applications
■ Switching application
Order codes
Part number
STD100N3LF3
STU100N3LF3
February 2007
Marking
100N3LF3
100N3LF3
Package
DPAK
IPAK
Rev 1
Packaging
Tape & reel
Tube
1/15
www.st.com
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STD100N3LF3 - STU100N3LF3
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD= 15V, ID= 40A,
RG=4.7Ω, VGS=10V
Figure 14 on page 9
Min. Typ. Max. Unit
9 ns
205 ns
31 ns
35 ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 40A, VGS = 0
ISD = 80A,
di/dt = 100A/µs,
VDD = 25V, TJ = 150°C
Figure 16 on page 9
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
80 A
320 A
1.3 V
40 ns
40 µC
2A
5/15
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