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What is STP135N10?

This electronic component, produced by the manufacturer "ST Microelectronics", performs the same function as "N-channel Power MOSFET".


STP135N10 Datasheet PDF - ST Microelectronics

Part Number STP135N10
Description N-channel Power MOSFET
Manufacturers ST Microelectronics 
Logo ST Microelectronics Logo 


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Total 8 Pages



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STB135N10
STP135N10
N-CHANNEL 100V - 0.007 - 135A D²PAK/TO-220
LOW GATE CHARGE STripFET™ POWER MOSFET
TARGET DATA
TYPE
VDSS
RDS(on)
ID
STB135N10
STP135N10
100 V
100 V
<0.009 135 A(*)
<0.009 135 A(*)
s TYPICAL RDS(on) = 0.007
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
3
1
D2PAK
TO-263
(Suffix “T4”)
3
2
1
TO-220
DESCRIPTION
This MOSFET is the result of STMicroelectronics’s well
established and consolidated STripFET technology utiliz-
ing the most recent layout optimization. The device exhib-
its extremely low on-resistance, gate charge and diode’s
reverse recovery charge Qrr making it the ideal switch in
a very large spectrum of applications such as Automotive,
Consumer, Telecom and Industrial.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s PRIMARY SWITCH IN TELECOM DC-DC
CONVERTER
s HIGH-EFFICIENCY DC-DC CONVERTERS
s 42V AUTOMOTIVE APPLICATIONS
s SYNCHRONOUS RECTIFICATION
s DIESEL INJECTION
s PWM UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID(*) Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(1)
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (2) Peak Diode Recovery voltage slope
EAS (3) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(1) Pulse width limited by safe operating area.
(*) Value limited by wire bonding
Value
100
100
± 20
135
96
540
150
1
TBD
TBD
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(2) ISD 40A, di/dt 600A/µs, VDD BVDSS, Tj TJMAX.
(3) Starting Tj = 25 oC, ID = 40A, VDD = 50V
July 2003
This is preliminary information on a new product forseen to be developped. Details are subject to change without notice
1/8

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STP135N10 equivalent
STB135N10 STP135N10
DIM.
A
A1
A2
B
B2
C
C2
D
D1
E
E1
G
L
L2
L3
M
R
V2
MIN.
4.4
2.49
0.03
0.7
1.14
0.45
1.21
8.95
10
4.88
15
1.27
1.4
2.4
D2PAK MECHANICAL DATA
mm.
TYP.
8
8.5
0.4
MAX.
4.6
2.69
0.23
0.93
1.7
0.6
1.36
9.35
10.4
5.28
15.85
1.4
1.75
3.2
MIN.
0.173
0.098
0.001
0.028
0.045
0.018
0.048
0.352
0.394
0.192
0.591
0.050
0.055
0.094
inch.
TYP.
0.315
0.334
0.015
TYP.
0.181
0.106
0.009
0.037
0.067
0.024
0.054
0.368
0.409
0.208
0.624
0.055
0.069
0.126
5/8


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for STP135N10 electronic component.


Information Total 8 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
STP135N10The function is N-channel Power MOSFET. ST MicroelectronicsST Microelectronics

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