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Datasheet 75N75 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 75N75 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
75N75
·DESCRIPTION ·Drain Current ID= 75A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 75V(Min) ·Fast Switching Speed
·APPLICATIONS ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARA |  Inchange Semiconductor | mosfet |
| 2 | 75N75 | N-Channel Enhancement Mode MOSFET Shenzhen Tuofeng Semiconductor Technology Co., Ltd
75N75
Features
• 70V/80A,
RDS(ON)=5.6 mΩ (typ.) @ VGS=10V
• Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available
(RoHS Compliant)
N-Channel Enhancement Mode MOSFET
Pin Description
G D S
D
Applications
• Powe |  Tuofeng Semiconductor | mosfet |
| 3 | 75N75 | N-CHANNEL POWER MOSTFET
UNISONIC TECHNOLOGIES CO., LTD 75N75
75Amps, 75Volts N-CHANNEL POWER MOSTFET
DESCRIPTION
The UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and co |  Unisonic Technologies | data |
75N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 75N05 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
75N05
·DESCRIPTION ·Drain Current ID= 75A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 50V(Min) ·Fast Switching Speed
·APPLICATIONS ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARA Inchange Semiconductor mosfet | | |
| 2 | 75N05 | SUB75N05 SUP/SUB75N05-06
Vishay Siliconix
N-Channel 50-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
50
rDS(on) (W)
0.006
ID (A)
75
TO-220AB
D
TO-263
G DRAIN connected to TAB G G D S Top View SUP75N05-06 SUB75N05-06 N-Channel MOSFET D S
Top View S
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHE  Vishay data | | |
| 3 | 75N06 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
75N06
·DESCRIPTION ·Drain Current ID=75A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Fast Switching Speed
·APPLICATIONS ·General purpose power amplifier
·ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARA Inchange Semiconductor mosfet | | |
| 4 | 75N08 | N-CHANNEL MOSFET 75N08(F,B,H)
75A mps,80 Volts N-CHANNEL MOSFET
FEATURE
75A,80V,RDS(ON)=17mΩ@VGS=10V/35A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 75N08
ITO-220AB 75N08F
TO-263 75N08B
TO-262 75N08H
Absolute Maximum Ratings(TC=25�  CHONGQING PINGYANG mosfet | | |
| 5 | 75N08 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
75N08
FEATURES ·Drain Current –ID= 75A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 80V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.015Ω(Max)
DESCRIPTION Suitable as primary switch in advanced high-effici Inchange Semiconductor mosfet | | |
| 6 | 75N08 | FDP75N08 www.DataSheet.co.kr
FDP75N08 75V N-Channel MOSFET
June 2006
UniFET
FDP75N08
75V N-Channel MOSFET
Features
• • • • • • 75A, 75V, RDS(on) = 0.011Ω @VGS = 10 V Low gate charge ( typical 150 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability
TM  Fairchild Semiconductor data | | |
| 7 | 75N08 | Low voltage high current power MOS FET 75N08
* '6
72
Available
RoHS*
COMPLIANT
'
* 6
VDS ID VGS PD TJ Tstg EAS
80
Ciss Coss Crss
VDS=v, V GS=0V,f=1.0MHZ VDS=v, V GS=0V,f=1.0MHZ VDS=v, V GS=0V,f=1.0MHZ
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খ᭄䇈ᯢ
ヺো
ⓣ⑤ড⬉य़
BVDSS
ⓣ⑤ℶ⬉⌕
IDSS
ᷙ⑤ℶ�  ETC data | |
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