74AUP2G80 Datasheet PDF - NXP Semiconductors
Part Number | 74AUP2G80 | |
Description | Low-power dual D-type flip-flop | |
Manufacturers | NXP Semiconductors | |
Logo | ||
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74AUP2G80
Low-power dual D-type flip-flop; positive-edge trigger
Rev. 01 — 25 August 2006
Product data sheet
1. General description
The 74AUP2G80 is a high-performance, low-power, low-voltage, Si-gate CMOS device,
superior to most advanced CMOS compatible TTL families.
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire VCC range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial Power-down applications using IOFF.
The IOFF circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
The 74AUP2G80 provides the single positive-edge triggered D-type flip-flop. Information
on the data input is transferred to the Q output on the LOW-to-HIGH transition of the clock
pulse. The input pin D must be stable one setup time prior to the LOW-to-HIGH clock
transition for predictable operation.
2. Features
s Wide supply voltage range from 0.8 V to 3.6 V
s High noise immunity
s Complies with JEDEC standards:
x JESD8-12 (0.8 V to 1.3 V)
x JESD8-11 (0.9 V to 1.65 V)
x JESD8-7 (1.2 V to 1.95 V)
x JESD8-5 (1.8 V to 2.7 V)
x JESD8-B (2.7 V to 3.6 V)
s ESD protection:
x HBM JESD22-A114-D Class 3A exceeds 5000 V
x MM JESD22-A115-A exceeds 200 V
x CDM JESD22-C101-C exceeds 1000 V
s Low static power consumption; ICC = 0.9 µA (maximum)
s Latch-up performance exceeds 100 mA per JESD 78 Class II
s Inputs accept voltages up to 3.6 V
s Low noise overshoot and undershoot < 10 % of VCC
s IOFF circuitry provides partial Power-down mode operation
s Multiple package options
s Specified from −40 °C to +85 °C and −40 °C to +125 °C
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Philips Semiconductors
74AUP2G80
Low-power dual D-type flip-flop; positive-edge trigger
10. Static characteristics
Table 7. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min Typ
Tamb = 25 °C
VIH HIGH-level input voltage
VCC = 0.8 V
VCC = 0.9 V to 1.95 V
0.70 × VCC -
0.65 × VCC -
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
1.6 -
2.0 -
VIL LOW-level input voltage VCC = 0.8 V
VCC = 0.9 V to 1.95 V
--
--
VCC = 2.3 V to 2.7 V
--
VCC = 3.0 V to 3.6 V
--
VOH HIGH-level output voltage VI = VIH or VIL
IO = −20 µA; VCC = 0.8 V to 3.6 V
IO = −1.1 mA; VCC = 1.1 V
IO = −1.7 mA; VCC = 1.4 V
IO = −1.9 mA; VCC = 1.65 V
IO = −2.3 mA; VCC = 2.3 V
IO = −3.1 mA; VCC = 2.3 V
IO = −2.7 mA; VCC = 3.0 V
IO = −4.0 mA; VCC = 3.0 V
VCC − 0.1 -
0.75 × VCC -
1.11 -
1.32 -
2.05 -
1.9 -
2.72 -
2.6 -
VOL LOW-level output voltage VI = VIH or VIL
IO = 20 µA; VCC = 0.8 V to 3.6 V
-
-
IO = 1.1 mA; VCC = 1.1 V
--
IO = 1.7 mA; VCC = 1.4 V
IO = 1.9 mA; VCC = 1.65 V
--
--
IO = 2.3 mA; VCC = 2.3 V
IO = 3.1 mA; VCC = 2.3 V
--
--
IO = 2.7 mA; VCC = 3.0 V
--
IO = 4.0 mA; VCC = 3.0 V
--
II
input leakage current
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
-
-
IOFF
∆IOFF
power-off leakage current
additional power-off
leakage current
VI or VO = 0 V to 3.6 V; VCC = 0 V
VI or VO = 0 V to 3.6 V;
VCC = 0 V to 0.2 V
-
-
-
-
ICC
∆ICC
supply current
additional supply current
VI = GND or VCC; IO = 0 A;
VCC = 0.8 V to 3.6 V
VI = VCC − 0.6 V; IO = 0 A;
VCC = 3.3 V
-
[1] -
-
-
CI input capacitance
VCC = 0 V to 3.6 V; VI = GND or VCC
-
0.6
CO output capacitance
VO = GND; VCC = 0 V
- 1.3
Max Unit
-V
-V
-V
-V
0.30 × VCC V
0.35 × VCC V
0.7 V
0.9 V
-V
-V
-V
-V
-V
-V
-V
-V
0.1
0.3 × VCC
0.31
0.31
0.31
0.44
0.31
0.44
±0.1
±0.2
±0.2
V
V
V
V
V
V
V
V
µA
µA
µA
0.5 µA
40 µA
- pF
- pF
74AUP2G80_1
Product data sheet
Rev. 01 — 25 August 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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