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PDF STP11NM60 Data sheet ( Hoja de datos )
| Número de pieza | STP11NM60 | |
| Descripción | N-CHANNEL Power MOSFET | |
| Fabricantes | ST Microelectronics | |
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STP11NM60 - STP11NM60FP
STB11NM60 - STB11NM60-1
N-channel 650V @ TJmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK
MDmesh™ Power MOSFET
General features
Type
STP11NM60
STP11NM60FP
STB11NM60
STB11NM60-1
VDSS
(@TJ=TJmax)
650V
650V
650V
650V
RDS(on)
<0.45Ω
<0.45Ω
<0.45Ω
<0.45Ω
ID
11A
11A
11A
11A
■ High dv/dt and avalanche capabilities
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Description
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain
process with the Company’s PowerMESH™
horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprietary strip
technique yields overall dynamic performance
that is significantly better than that of similar
competition’s products.
Applications
■ Switching application
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D2PAK
i2PAK
123
Internal schematic diagram
Order codes
Part number
STB11NM60T4
STB11NM60-1
STP11NM60
STP11NM60FP
Marking
B11NM60
B11NM60-1
P11NM60
P11NM60FP
Package
D²PAK
I²PAK
TO-220
TO-220FP
Packaging
Tape & reel
Tube
Tube
Tube
January 2007
Rev 6
1/16
www.st.com
16
1 page  
STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
Turn-on delay time
Rise time
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
Test conditions
VDD=300 V, ID=5.5A,
RG=4.7Ω, VGS=10V
(see Figure 17)
VDD=480V, ID=11A,
RG=4.7Ω, VGS=10V
(see Figure 17)
Min. Typ. Max. Unit
20 ns
20 ns
6 ns
11 ns
19 ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=11A, VGS=0
ISD=11A,
di/dt = 100A/µs,
VDD=100V, Tj=25°C
(see Figure 16)
ISD=11A,
di/dt = 100A/µs,
VDD=100V, Tj=150°C
(see Figure 16)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
11 A
44 A
1.5 V
390 ns
3.8 µC
19.5 A
570 ns
5.7 µC
20 A
5/16
5 Page 
STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1
Package mechanical data
DIM.
A
b
b1
c
D
E
e
e1
F
H1
J1
L
L1
L20
L30
øP
Q
MIN.
4.40
0.61
1.15
0.49
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
TO-220 MECHANICAL DATA
mm.
TYP
16.40
28.90
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
MIN.
0.173
0.024
0.045
0.019
0.60
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
inch
TYP.
0.645
1.137
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
0.151
0.116
11/16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet STP11NM60.PDF ] | |
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