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What is STD11NM60N-1?

This electronic component, produced by the manufacturer "ST Microelectronics", performs the same function as "N-channel Second generation MDmesh Power MOSFET".


STD11NM60N-1 Datasheet PDF - ST Microelectronics

Part Number STD11NM60N-1
Description N-channel Second generation MDmesh Power MOSFET
Manufacturers ST Microelectronics 
Logo ST Microelectronics Logo 


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STD11NM60N - STD11NM60N-1
STP11NM60N - STF11NM60N
N-channel 600V - 0.37- 10A - TO-220 - TO-220FP- IPAK - DPAK
Second generation MDmesh™ Power MOSFET
General features
Type
VDSS
(@Tjmax)
RDS(on)
ID
STD11NM60N
STD11NM60N-1
STF11NM60N
STP11NM60N
650V
650V
650V
650V
<0.45
<0.45
<0.45
<0.45
10A
10A
10A (1)
10A
1. Limited only by maximum temperature allowed
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistancel
Description
This series of devices is realized with the second
generation of MDmesh™ Technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters
Applications
Switching application
3
2
1
TO-220
3
2
1
IPAK
3
1
DPAK
3
2
1
TO-220FP
Internal schematic diagram
Order codes
Part number
STD11NM60N-1
STD11NM60N
STP11NM60N
STF11NM60N
Marking
D11NM60N
D11NM60N
P11NM60N
F11NM60N
Package
IPAK
DPAK
TO-220
TO-220FP
Packaging
Tube
Tape & reel
Tube
Tube
November 2006
Rev 2
1/17
www.st.com
17

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STD11NM60N-1 equivalent
STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD=300V, ID=5A,
RG=4.7Ω, VGS=10V
(see Figure 17)
Min Typ Max Unit
22 ns
18.5 ns
50 ns
12 ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM
VSD(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 10A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=10A, di/dt =100A/µs,
VDD=100V, Tj=25°C
(see Figure 22)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VDD=100V
di/dt =100A/µs, ISD=10A
Tj=150°C (see Figure 22)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min Typ Max Unit
10
40
1.3
340
3.26
19.2
460
4.42
19.2
A
A
V
ns
µC
A
ns
µC
A
5/17


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Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
STD11NM60N-1The function is N-channel Second generation MDmesh Power MOSFET. ST MicroelectronicsST Microelectronics

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