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What is UT62L25616?

This electronic component, produced by the manufacturer "Utron", performs the same function as "256K X 16 BIT LOW POWER CMOS SRAM".


UT62L25616 Datasheet PDF - Utron

Part Number UT62L25616
Description 256K X 16 BIT LOW POWER CMOS SRAM
Manufacturers Utron 
Logo Utron Logo 


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Rev. 1.1
UTRON
UT62L25616(I)
256K X 16 BIT LOW POWER CMOS SRAM
FEATURES
Fast access time : 55/70/100 ns
CMOS Low operating power
Operating current: 45/35/25mA (Icc max)
Standby current: 20 uA(TYP.) L-version
3 uA(TYP.) LL-version
Single 2.7V~3.6V power supply
Operating temperature:
Industrial : -40~85
All inputs and outputs TTL compatible
Fully static operation
Three state outputs
Data retention voltage: 1.5V (min)
Data byte control : LB (I/O1~I/O8)
UB (I/O9~I/O16)
Package : 44-pin 400mil TSOP
48-pin 6mm × 8mm TFBGA
FUNCTIONAL BLOCK DIAGRAM
A0
A1
A2
A3 .
A4 ROW
.A8 DECODER
A13
A14
.
A15
A16
A17
I/O...1
...
I/O
CONTROL
I/O16
CE
WE
OE
LOGIC
CONTROL
...
MEMORY ARRAY
2048 Rows x 128 Columns x 16 bits
. ..
COLUMN I/O
COLUMN DECODER
LB
UB A9 A10 A11 A12 A5 A6 A7
VCC
VSS
GENERAL DESCRIPTION
The UT62L25616(I) is a 4,194,304-bit low power
CMOS static random access memory organized as
262,144 words by 16 bits.
The UT62L25616(I) operates from a single 2.7V ~
3.6V power supply and all inputs and outputs are fully
TTL compatible.
The UT62L25616(I) is designed for low power system
applications. It is particularly suited for use in
high-density high-speed system applications.
PIN DESCRIPTION
SYMBOL
A0 - A17
I/O1 - I/O16
CE
WE
OE
LB
UB
VCC
VSS
NC
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Write Enable Input
Output Enable Input
Lower-Byte Control
High-Byte Control
Power Supply
Ground
No Connection
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
1
P80054

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UT62L25616 equivalent
Rev. 1.1
UTRON
TIMING WAVEFORMS
READ CYCLE 1 (Address Controlled) (1,2,4)
Address
DOUT
tAA
tOH
UT62L25616(I)
256K X 16 BIT LOW POWER CMOS SRAM
tRC
Data Valid
tOH
READ CYCLE 2 ( CE and OE Controlled) (1,3,5,6)
t RC
Address
CE
t AA
t ACE
LB , UB
OE
Dout
t CLZ
HIGH-Z
t OLZ
t BA
t BLZ
t OE
t OH
t CHZ
t OHZ
Data Valid
t BHZ
HIGH-Z
Notes :
1. WE is HIGH for read cycle.
2. Device is continuously selected CE =VIL.
3. Address must be valid prior to or coincident with CE transition; otherwise tAA is the limiting parameter.
4. OE is LOW.
5. tCLZ, tOLZ, tCHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
6. At any given temperature and voltage condition, tCHZ is less than tCLZ, tOHZ is less than tOLZ.
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
5
P80054


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for UT62L25616 electronic component.


Information Total 12 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
UT62L25616The function is 256K X 16 BIT LOW POWER CMOS SRAM. UtronUtron

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