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PDF BAW101S Data sheet ( Hoja de datos )
| Número de pieza | BAW101S | |
| Descripción | High voltage double diode | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BAW101S (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
MBD128
BAW101S
High voltage double diode
Product data sheet
2003 May 13
1 page  
NXP Semiconductors
High voltage double diode
102
handbook, full pagewidth
IFSM
(A)
10
Product data sheet
BAW101S
MBG703
1
10−1
1
10
102
103
tp (µs)
104
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
102
handbook, halfpage
IR
(µA)
10
(1) (2)
1
MLE058
10−1
10−2
0
50 100 150 200
Tj (°C)
handbook0, .h6alfpage
Cd
(pF)
0.5
MLE059
0.4
0.3
0.2
0
2
46
8 10
VR (V)
(1) VR = VRMAX: maximum values.
(2) VR = VRMAX: typical values.
Fig.5 Reverse current as a function of junction
temperature.
2003 May 13
f = 1 MHz; Tj = 25 °C.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BAW101S.PDF ] | |
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