UPA1873 Datasheet PDF - NEC
Part Number | UPA1873 | |
Description | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
Manufacturers | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1873
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA1873 is a switching device which can be
driven directly by a 2.5 V power source.
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 23.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)
RDS(on)2 = 24.0 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A)
RDS(on)3 = 28.0 mΩ MAX. (VGS = 3.1 V, ID = 3.0 A)
RDS(on)4 = 29.0 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A)
• Built-in G-S protection diode against ESD
PACKAGE DRAWING (Unit : mm)
85
1 : Drain1
2, 3 : Source1 1.2 MAX.
4 : Gate1
1.0±0.05
5 : Gate2
6, 7 : Source2
8 : Drain2
3°
+5°
–3°
0.1±0.05
14
3.15 ±0.15
3.0 ±0.1
6.4 ±0.2
4.4 ±0.1
ORDERING INFORMATION
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0.25
0.5
0.6
+0.15
–0.1
1.0 ±0.2
PART NUMBER
µPA1873GR-9JG
PACKAGE
Power TSSOP8
0.65 0.8 MAX.
0.27
+0.03
–0.08
0.10 M
0.1
DataShee
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
Gate to Source Voltage (VDS = 0 V)
VGSS
±12
Drain Current (DC) (TA = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (2 unit) Note2
ID(DC)
ID(pulse)
PT
±6.0
±80
2.0
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to +150
V
V
A
A
W
°C
°C
EQUIVALENT CIRCUIT
Drain1
Drain2
Gate1
Body
Diode Gate2
Body
Diode
Gate
Protection
Diode
Source1
Gate
Protection
Diode
Source2
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on ceramic substrate of 5000 mm2 x 1.1 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15629EJ1V0DS00 (1st edition)
Date Published December 2001 NS CP(K)
Printed in Japan
©
2001
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µ PA1873
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10000
1000
100
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
SWITCHING CHARACTERISTICS
1000
td (off)
tf
100
tr
td (on)
10
0.1
1 10
VDS - Drain to Source Voltage - V
100
VDD = 10 V
VGS = 4.0 V
10 RG = 10 Ω
0.1
1
ID - Drain Current - A
10
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100 Pulsed
VGS = 0 V
10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
5
ID = 6.0 A
VDD = 16 V
4
10 V
3
1
2
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0.1
1
0.01
0.4
0.6 0.8
1.0
VF(S-D) - Source to Drain Voltage - V
1.2
0
048
QG - Gate Charge - nC
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Single Pulse
PD (FET1) : PD (FET2) = 1:1
Mounted on FR-4 board of 25 cm2 x 1.6 mm
125˚C/W
Mounted on ceramic board of 50 cm2 x 1.1 mm
62.5˚C/W
10
12
DataShee
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1
0.1
0.001
0.01
0.1 1 10
PW - Pulse Width - s
Data Sheet G15629EJ1V0DS
100 1000
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for UPA1873 electronic component. |
Information | Total 8 Pages | |
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