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What is 1.5KE62A?

This electronic component, produced by the manufacturer "ON Semiconductor", performs the same function as "1500 Watt MosorbE Zener Transient Voltage Transient Voltage".


1.5KE62A Datasheet PDF - ON Semiconductor

Part Number 1.5KE62A
Description 1500 Watt MosorbE Zener Transient Voltage Transient Voltage
Manufacturers ON Semiconductor 
Logo ON Semiconductor Logo 


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1N6267A Series
1500 Watt MosorbZener
Transient Voltage
Suppressors
Unidirectional*
Mosorb devices are designed to protect voltage sensitive
components from high voltage, high–energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmeticaxial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.
Specification Features:
Working Peak Reverse Voltage Range – 5.8 V to 214 V
Peak Power – 1500 Watts @ 1 ms
ESD Rating of Class 3 (>16 KV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5 mA Above 10 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1 ns
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16from the case for 10 seconds
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Peak Power Dissipation (Note 1)
@ TL 25°C
PPK
1500
Watts
Steady State Power Dissipation
@ TL 75°C, Lead Length = 3/8
Derated above TL = 75°C
Thermal Resistance, Junction–to–Lead
Forward Surge Current (Note 2)
@ TA = 25°C
Operating and Storage
Temperature Range
PD
RqJL
IFSM
TJ, Tstg
5.0 Watts
20 mW/°C
20 °C/W
200 Amps
– 65 to
+175
°C
1. Nonrepetitive current pulse per Figure 5 and derated above TA = 25°C per
Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses
per minute maximum.
*Please see 1.5KE6.8CA to 1.5KE250CA for Bidirectional Devices
© Semiconductor Components Industries, LLC, 2002
June, 2002 – Rev. 5
1
http://onsemi.com
Cathode
Anode
AXIAL LEAD
CASE 41A
PLASTIC
L
1N6
xxxA
1.5KE
xxxA
YYWW
L = Assembly Location
1N6xxxA = JEDEC Device Code
1.5KExxxA = ON Device Code
YY = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
1.5KExxxA
1.5KExxxARL4
Axial Lead 500 Units/Box
Axial Lead 1500/Tape & Reel
1N6xxxA
Axial Lead 500 Units/Box
1N6xxxARL4* Axial Lead 1500/Tape & Reel
*1N6302A Not Available in 1500/Tape & Reel
Devices listed in bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.
Publication Order Number:
1N6267A/D

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1.5KE62A equivalent
1N6267A Series
1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C
1000
500
TLĂ=Ă25°C
tPĂ=Ă10Ăms
200
VBR(NOM)Ă=Ă6.8 to 13ĂV
20ĂV
24ĂV 43ĂV
100
50
20
10
5
1000
500
TLĂ=Ă25°C
tPĂ=Ă10Ăms
200
100
50
20
10
5
1.5KE6.8CA
through
1.5KE200CA
VBR(NOM)Ă=Ă6.8 to 13ĂV
20ĂV
24ĂV
43ĂV
75ĂV
180ĂV
120ĂV
2
1
0.3 0.5 0.7 1
2 3 5 7 10
20 30
DVBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS)
2
1
0.3 0.5 0.7 1
2 3 5 7 10
20 30
DVBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS)
Figure 6. Dynamic Impedance
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.1 0.2
PULSE WIDTH
10 ms
1 ms
100 ms
10 ms
0.5 1 2
5 10 20
D, DUTY CYCLE (%)
50 100
Figure 7. Typical Derating Factor for Duty Cycle
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitance
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 8.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 9. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. These devices have
excellent response time, typically in the picosecond range
and negligible inductance. However, external inductive
effects could produce unacceptable overshoot. Proper
circuit layout, minimum lead lengths and placing the
suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
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