1C5819B Datasheet PDF - Sensitron
Part Number | 1C5819B | |
Description | (1C5819A - 1C5819C) Silicon Schottky Rectifier DIE | |
Manufacturers | Sensitron | |
Logo | ||
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SENSITRON
SEMICONDUCTOR
1C5819A/B/C
TECHNICAL DATA
DATA SHEET 676, REV. -
SILICON SCHOTTKY RECTIFIER DIE
Very Low Forward Voltage Drop
Applications:
• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
Features:
• Soft Reverse Recovery at Low and High Temperature
• Very Low Forward Voltage Drop
• Low Power Loss, High Efficiency
• High Surge Capacity
• Guard Ring for Enhanced Durability and Long Term Reliability
• Guaranteed Reverse Avalanche Characteristics
• Electrically / Mechanically Stable during and after Packaging
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche
Energy
Repetitive Avalanche Current
Max. Junction Temperature
Max. Storage Temperature
Electrical Characteristics:
Symbol
VRWM
IF(AV)
IFSM
EAS
IAR
TJ
Tstg
Condition
-
50% duty cycle, rectangular
wave form
8.3 ms, Sine pulse (1)
TJ = 25 °C, IAS = 0.18 A,
L = 160 mH
IAS decay linearly to 0 in 1 µs
ƒ limited by TJ max VA=1.5VR
-
-
Max.
45
1
25
2.6
0.18
-55 to +125
-55 to +150
Units
V
A
A
mJ
A
°C
°C
Characteristics
Max. Forward Voltage Drop
Max. Reverse Current
Max. Junction Capacitance
(1) in SHD package
Symbol
VF1
VF2
IR1
IR2
CT
Condition
@ 1A, Pulse, TJ = 25 °C
@ 1A, Pulse, TJ = 100 °C
@VR = 45V, Pulse,
TJ = 25 °C
@VR = 45V, Pulse,
TJ = 100 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz,
VSIG = 50mV (p-p)
Max.
0.49
0.45
50
5.0
70
Units
V
V
µA
mA
pF
• 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 •
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 1C5819B electronic component. |
Information | Total 3 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ 1C5819B.PDF Datasheet ] |
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