ST2304 Datasheet PDF - Stanson Technology
| Part Number | ST2304 | |
| Description | N Channel Enchancement Mode MOSFET | |
| Manufacturers | Stanson Technology | |
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N Channel Enchancement Mode MOSFET
2.5A
ST2304
DESCRIPTION
The ST2304 is the N-Channel logic enhancement mode power field effect transistor are
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other batter powered circuits, and low in-line
power loss are needed in a very small outine surface mount package.
PIN CONFIGURATION
SOT-23-3L
3
D
G
S
12
1.Gate 2.Source 3.Drain
3
S04YA
FEATURE
z 30V/2.5A, RDS(ON) = 70m-ohm
@VGS = 10V
z 30V/2.0A, RDS(ON) = 105m-ohm
@VGS = 4.5V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and maximum
DC current capability
z SOT-23-3L package design
12
S: Subcontractor Y: Year Code W: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
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N Channel Enchancement Mode MOSFET ST2304
2.5A
TYPICAL CHARACTERICTICS (25 Unless noted)
Page 5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for ST2304 electronic component. |
| Information | Total 6 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ ST2304.PDF Datasheet ] | |
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| Part Number | Description | MFRS |
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