|
|
Datasheet 2SK3563 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | 2SK3563 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS) DataSheet.in
TENTATIVE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅥ)
2SK3563
2SK3563
unit:mm
Switching Regulator Applications
10±0.3
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain |
Toshiba Semiconductor |
|
1 | 2SK3563 | Field Effect Transistor Silicon N Channel MOS Type DataSheet.in
TENTATIVE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅥ)
2SK3563
2SK3563
unit:mm
Switching Regulator Applications
10±0.3
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain |
Toshiba Semiconductor |
Esta página es del resultado de búsqueda del 2SK3563. Si pulsa el resultado de búsqueda de 2SK3563 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |