PDF HM51W17805 Data sheet ( Hoja de datos )

Número de pieza	HM51W17805
Descripción	16M EDO DRAM
Fabricantes	Elpida Memory
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No Preview Available ! HM51W17805 Series 16 M EDO DRAM (2-Mword × 8-bit) 2 k Refresh E0155H10 (Ver. 1.0) (Previous ADE-203-631D (Z)) Jun. 27, 2001 Description The HM51W17805 is a CMOS dynamic RAM organized 2,097,152-word × 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17805 offers Extended Data Out (EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM51W17805 to be packaged in standard 28-pin plastic SOJ and 28-pin TSOP. Features • Single 3.3 V (±0.3 V) • Access time: 50 ns/60 ns/70 ns (max) • Power dissipation  Active mode: 396 mW/360 mW/324 mW (max)  Standby mode : 7.2 mW (max) : 0.54 mW (max) (L-version) • EDO page mode capability • Long refresh period  2048 refresh cycles : 32 ms : 128 ms (L-version) • 4 variations of refresh  RAS-only refresh  CAS-before-RAS refresh  Hidden refresh  Self refresh (L-version) • Battery backup operation (L-version) Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd. 1 page Absolute Maximum Ratings Parameter Voltage on any pin relative to VSS Supply voltage relative to VSS Short circuit output current Power dissipation Operating temperature Storage temperature HM51W17805 Series Symbol VT VCC Iout PT Topr Tstg Value –0.5 to VCC + 0.5 (≤ 4.6 V (max)) –0.5 to +4.6 50 1.0 0 to +70 –55 to +125 Unit V V mA W °C °C Recommended DC Operating Conditions (Ta = 0 to +70°C) Parameter Supply voltage Input high voltage Input low voltage Note: 1. All voltage referred to VSS. Symbol VCC VIH VIL Min 3.0 2.0 –0.3 Typ 3.3 — — Max 3.6 VCC + 0.3 0.8 Unit V V V Note 1 1 1 Data Sheet E0155H10 5 5 Page HM51W17805 Series EDO Page Mode Cycle HM51W17805 -5 -6 -7 Parameter Symbol Min Max Min Max Min Max Unit EDO page mode cycle time t HPC EDO page mode RAS pulse width tRASP Access time from CAS precharge tCPA RAS hold time from CAS precharge tCPRH Output data hold time from CAS low tDOH CAS hold time referred OE t COL CAS to OE setup time t COP Read command hold time from CAS tRCHC precharge 20 — 25 — 30 — ns — 100000 — 100000 — 100000 ns — 30 — 35 — 40 ns 30 — 35 — 40 — ns 3— 3— 3— ns 8— 10 — 13 — ns 5— 5— 5— ns 30 — 35 — 40 — ns Notes 19 16 9, 17 9, 17 EDO Page Mode Read-Modify-Write Cycle HM51W17805 -5 -6 Parameter Symbol Min Max Min EDO page mode read- modify-write tHPRWC 57 — 68 cycle time WE delay time from CAS precharge tCPW 45 — 54 -7 Max Min — 79 — 62 Max Unit ns ns Notes 14 Refresh Parameter Refresh period Refresh period (L-version) Symbol t REF t REF Max 32 128 Unit ms ms Note 2048 cycles 2048 cycles Data Sheet E0155H10 11 11 Page

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Número de pieza	Descripción	Fabricantes
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