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Datasheet BUZ211 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BUZ211 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
BUZ211
DESCRIPTION ·Static Drain-Source On-Resistance
: RDS(on) = 0.8Ω(Max) ·SOA is Power Dissipation Limited
APPLICATIONS designed for applications such as switching regulators, switching converters, motor drivers | Inchange Semiconductor | mosfet |
2 | BUZ211 | (BUZ210 / BUZ211) Power Transistors w
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| Siemens | transistor |
3 | BUZ211 | High Voltage Power MOSFET N-Channel SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TO-204AA (TO-3)
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PRODUCT SPECIFICATIONS
TYPE: BUZ211
HIGH VOLTAGE POW | Semiconductor Technology | mosfet |
BUZ Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BUZ10 | N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET ®
BUZ10
N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET™ MOSFET
T YPE BUZ 10
s s s s s
V DSS 50 V
R DS(o n) < 0.07 Ω
ID 23 A
TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
3 1 2
APPLICATIONS HIGH CURRENT, H STMicroelectronics mosfet | | |
2 | BUZ10 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 10
Not for new design
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 10
VDS
50 V
ID
23 A
RDS(on)
0.07 Ω
Package TO-220 AB
Ordering Code C67078-S1300-A2
Maximum Ratings Parameter Continuous drain current Symbol Valu Siemens Semiconductor Group transistor | | |
3 | BUZ10 | Trans MOSFET N-CH 50V 23A 3-Pin(3+Tab) TO-220 New Jersey Semiconductor mosfet | | |
4 | BUZ100 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) BUZ 100
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 G Type BUZ 100 Pin 2 D Pin 3 S
VDS
50 V
ID
60 A
RDS(on)
0.018 Ω
Package TO-220 AB
Orde Siemens Semiconductor Group transistor | | |
5 | BUZ100L | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level) BUZ 100L
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Pin 1 G Pin 2 D Pin 3 S
Type BUZ 100L
VDS
50 V
ID
60 A
RDS(on)
0.018 Ω
Pac Siemens Semiconductor Group transistor | | |
6 | BUZ100S | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) BUZ 100 S
SPP77N05
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available
Pin 1 Pin 2 Pin 3
G
D
S
Type
VDS 55 V
ID 77 A
RDS(on) 0.015 Ω
Package
Ordering Code
BUZ 100 S
TO-220 AB
Q67 Siemens Semiconductor Group transistor | | |
7 | BUZ100SL | SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated) BUZ 100 SL
SPP70N05L
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available
Pin 1 Pin 2 Pin 3
G
D
S
Type
VDS 55 V
ID 70 A
RDS(on) 0.018 Ω
Package
Ordering Code
BUZ 100 Siemens Semiconductor Group transistor | |
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Número de pieza | Descripción | Fabricantes | |
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