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PDF IRF1010EZL Data sheet ( Hoja de datos )
| Número de pieza | IRF1010EZL | |
| Descripción | AUTOMOTIVE MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 95483
IRF1010EZPbF
AUTOMOTIVE MOSFET IRF1010EZSPbF
Features
O Advanced Process Technology
O Ultra Low On-Resistance
O Dynamic dv/dt Rating
O 175°C Operating Temperature
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax
O Lead-Free
G
IRF1010EZLPbF
HEXFET® Power MOSFET
D
VDSS = 60V
RDS(on) = 8.5mΩ
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operat-
ing temperature, fast switching speed and im-
proved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applica-
tions.
TO-220AB
IRF1010EZ
ID = 75A
S
D2Pak
IRF1010EZS
TO-262
IRF1010EZL
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Continuous Drain Current, VGS @ 10V (Package Limited)
cPulsed Drain Current
Maximum Power Dissipation
Max.
84
60
75
340
140
Units
A
W
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
hRepetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
0.90
± 20
99
180
See Fig.12a,12b,15,16
-55 to + 175
W/°C
V
mJ
A
mJ
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
300 (1.6mm from case )
10 lbf•in (1.1N•m)
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
jJunction-to-Ambient (PCB Mount, steady state)
Typ.
–––
0.50
–––
–––
Max.
1.11
–––
62
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
06/29/04
1 page  
IRF1010EZ/S/LPbF
100
90
80
70
60
50
40
30
20
10
0
25
Limited By Package
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current vs.
Case Temperature
2.5
ID = 84A
VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
10
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci= i/Ri
R2R2
τ2 τ2
R3R3 Ri (°C/W) τi (sec)
τCτ 0.415 0.000246
τ3τ3 0.410 0.000898
0.285 0.009546
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page 
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
IRF1010EZ/S/LPbF
TO-262 Part Marking Information
E XAMPL E :
T HIS IS AN IRL3103L
LOT CODE 1789
AS S EMBLED ON WW 19, 1997
IN T HE AS S EMBLY LINE "C"
Note: "P" in ass embly line
pos ition indicates "Lead-Free"
INT ERNAT IONAL
RECT IFIER
L OGO
AS S EMBLY
LOT CODE
OR
INT ERNAT IONAL
RECT IFIER
L OGO
AS S EMBLY
LOT CODE
www.irf.com
PART NUMBER
DAT E CODE
YEAR 7 = 1997
WEEK 19
LINE C
PART NUMBER
DAT E CODE
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
YEAR 7 = 1997
WEEK 19
A = AS S EMBLY S IT E CODE
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IRF1010EZL.PDF ] | |
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| IRF1010EZLPbF | AUTOMOTIVE MOSFET | International Rectifier |
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