|
|
PDF LM4120 Data sheet ( Hoja de datos )
| Número de pieza | LM4120 | |
| Descripción | Precision Micropower Low Dropout Voltage Reference | |
| Fabricantes | National Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de LM4120 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
|
No Preview Available !
February 2000
LM4120
Precision Micropower Low Dropout Voltage Reference
General Description
The LM4120 is a precision low power low dropout bandgap
voltage reference with up to 5 mA output current source and
sink capability.
This series reference operates with input voltages as low as
2V and up to 12V consuming 160 µA (Typ.) supply current. In
power down mode, device current drops to less than 2 µA.
The LM4120 comes in two grades (A and Standard) and
seven voltage options for greater flexibility. The best grade
devices (A) have an initial accuracy of 0.2%, while the stan-
dard have an initial accuracy of 0.5%, both with a tempco of
50ppm/˚C guaranteed from −40˚C to +125˚C.
The very low dropout voltage, low supply current and
power-down capability of the LM4120 makes this product an
ideal choice for battery powered and portable applications.
The device performance is guaranteed over the industrial
temperature range (−40˚C to +85˚C), while certain specs are
guaranteed over the extended temperature range (−40˚C to
+125˚C). Please contact National for full specifications over
the extended temperature range. The LM4120 is available in
a standard 5-pin SOT-23 package.
Features
n Small SOT23-5 package
n Low dropout voltage:
120 mV Typ @ 1 mA
n High output voltage accuracy:
0.2%
n Source and Sink current output:
±5 mA
n Supply current:
160 µA Typ.
n Low Temperature Coefficient:
50 ppm/˚C
n Enable pin
n Fixed output voltages: 1.8, 2.048, 2.5, 3.0, 3.3, 4.096
and 5.0V
n Industrial temperature Range:
−40˚C to +85˚C
n (For extended temperature range, −40˚C to 125˚C,
contact National Semiconductor)
Applications
n Portable, battery powered equipment
n Instrumentation and process control
n Automotive & Industrial
n Test equipment
n Data acquisition systems
n Precision regulators
n Battery chargers
n Base stations
n Communications
n Medical equipment
Functional Block Diagram
Connection Diagram
DS101047-2
Refer to the Ordering Information Table in this Data Sheet for Specific
Part Number
SOT23-5 Surface Mount Package
DS101047-1
© 2000 National Semiconductor Corporation DS101047
www.national.com
1 page  
Electrical Characteristics
LM4120-3.0V, 3.3V, 4.096V and 5.0V Unless otherwise specified VIN = VOUT + 1V, ILOAD = 0, COUT =
0.01µF, TA = Tj = 25˚C. Limits with standard typeface are for Tj = 25˚C, and limits in boldface type apply over the −40˚C ≤
TA ≤ +85˚C temperature range. (Continued)
Symbol
VH
VL
IH
IL
Parameter
Logic High Input Voltage
Logic Low Input Voltage
Logic High Input Current
Logic Low Input Current
ISC Short Circuit Current
Hyst
∆VOUT
Thermal Hysteresis
(Note 7)
Long Term Stability
(Note 9)
Conditions
VOUT = 0
VIN = 12V, VOUT = 0
−40˚C ≤ TA ≤ 125˚C
1000 hrs. @ 25˚C
Min (Note 5)
2.4
6
6
Typ (Note 4)
2.4
0.4
7
0.1
15
17
0.5
Max (Note 5)
0.2
15
30
30
Units
V
V
µA
µA
mA
mV/V
100 ppm
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see Electrical Characteristics. The guar-
anteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test
conditions.
Note 2: Without PCB copper enhancements. The maximum power dissipation must be de-rated at elevated temperatures and is limited by TJMAX (maximum junction
temperature), θJ-A (junction to ambient thermal resistance) and TA (ambient temperature). The maximum power dissipation at any temperature is: PDissMAX = (TJMAX
− TA)/θJ-A up to the value listed in the Absolute Maximum Ratings.
Note 3: The human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin. The machine model is a 200 pF capacitor discharged di-
rectly into each pin.
Note 4: Typical numbers are at 25˚C and represent the most likely parametric norm.
Note 5: Limits are 100% production tested at 25˚C. Limits over the operating temperature range are guaranteed through correlation using Statistical Quality Control
(SQC) methods. The limits are used to calculate National’s Averaging Outgoing Quality Level (AOQL).
Note 6: Dropout voltage is the differential voltage between VOUT and VIN at which VOUT changes ≤ 1% from VOUT at VIN = 3.3V for 1.8V, 2.0V, 2.5V and VOUT +
1V for others.For 1.8V option, dropout voltage is not guaranteed over temperature. A parasitic diode exists between input and output pins; it will conduct if VOUT is
pulled to a higher voltage than VIN.
Note 7: Thermal hysteresis is defined as the change in +25˚C output voltage before and after exposing the device to temperature extremes.
Note 8: Output noise voltage is proportional to VOUT. VN for other voltage option is calculated using (VN(1.8V)/1.8) * VOUT. VN (2.5V) = (36µVPP/1.8) * 2.5 = 46µVPP.
Note 9: Long term stability is change in VREF at 25˚C measured continuously during 1000 hrs.
LM4120 Typical Operating Characteristics Unless otherwise specified, VIN = 3.3V, VOUT = 2.5V,
ILOAD = 0, COUT = 0.022µF, TA = 25˚C and VEN = VIN.
Long Term Drift
Typical Temperature Drift
Short Circuit Current vs
Temperature
DS101047-12
DS101047-13
5
DS101047-14
www.national.com
5 Page 
Physical Dimensions inches (millimeters) unless otherwise noted
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL
COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and
whose failure to perform when properly used in
accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a
significant injury to the user.
2. A critical component is any component of a life
support device or system whose failure to perform
can be reasonably expected to cause the failure of
the life support device or system, or to affect its
safety or effectiveness.
National Semiconductor
Corporation
Americas
Tel: 1-800-272-9959
Fax: 1-800-737-7018
Email: [email protected]
www.national.com
National Semiconductor
Europe
Fax: +49 (0) 180-530 85 86
Email: [email protected]
Deutsch Tel: +49 (0) 69 9508 6208
English Tel: +44 (0) 870 24 0 2171
Français Tel: +33 (0) 1 41 91 8790
National Semiconductor
Asia Pacific Customer
Response Group
Tel: 65-2544466
Fax: 65-2504466
Email: [email protected]
National Semiconductor
Japan Ltd.
Tel: 81-3-5639-7560
Fax: 81-3-5639-7507
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet LM4120.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| LM4120 | Precision Micropower Low Dropout Voltage Reference | National Semiconductor |
| LM4120 | Precision Micropower Low Dropout Voltage Reference (Rev. F) |  Texas Instruments |
| LM4121 | Precision Micropower Low Dropout Voltage Reference | National Semiconductor |
| LM4121 | LM4121 Precision Micropower Low Dropout Voltage Reference (Rev. C) | Texas Instruments |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |