|
|
PDF MRF21085SR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF21085SR3 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MRF21085SR3 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF21085/D
The RF MOSFET Line
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• TI3D.y8Qp4i=cMa1lH020z-,0cAamdrrAjiae,crfe1Wn=t-CC2h1Da3Mn5nAMePlHsezMr,fofe2ram=sau2nre1cd4e5ofoMvreHVr zD3,.D8C4=haM2n8HnVzeolBlBtWsa,n@dwfi1dth-5=MHz
and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW
@ f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability
on CCDF.
Output Power — 19 Watts Avg.
Power Gain — 13.6 dB
Efficiency — 23%
IM3 — - 37.5 dBc
ACPR — - 41 dBc
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 90 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF21085R3
MRF21085SR3
MRF21085LSR3
2170 MHz, 90 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF21085R3
CASE 465A - 06, STYLE 1
NI - 780S
MRF21085SR3, MRF21085LSR3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
- 0.5, +15
224
1.28
- 65 to +150
200
Value (1)
0.78
Class
1 (Minimum)
M3 (Minimum)
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
MMoOtorToOla,RInOc.L2A00R4 F DEVICE DATA
MRF21085R3 MRF21085SR3 MRF21085LSR3
For More Information On This Product,
Go to: www.freescale.com
1
1 page  
Freescale Semiconductor, Inc.
R1
R2
C5 C4
B1
C3
C2
R3
WB1
C7 C8
L1
C10 R4
C9
C11 C12
WB2
C1 C6
MRF21085
Rev 3
Figure 2. MRF21085 Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
MRF21085R3 MRF21085SR3 MRF21085LSR3
For More Information On This Product,
Go to: www.freescale.com
5
5 Page 
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
B
B
(FLANGE)
H
E
A
G
1
2
D
bbb M T A M
A
(FLANGE)
2X Q
bbb M T A M B M
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M − 1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
K
INCHES
MILLIMETERS
BM
M (INSULATOR)
bbb M T A M B M
N (LID)
ccc M T A M B M
C
R (LID)
ccc M T A M B M
S (INSULATOR)
aaa M T A M B M
DIM MIN MAX
A 1.335 1.345
B 0.380 0.390
C 0.125 0.170
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
G 1.100 BSC
H 0.057 0.067
K 0.170 0.210
M 0.774 0.786
N 0.772 0.788
Q .118 .138
R 0.365 0.375
S 0.365 0.375
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
MIN MAX
33.91 34.16
9.65 9.91
3.18 4.32
12.57 12.83
0.89 1.14
0.08 0.15
27.94 BSC
1.45 1.70
4.32 5.33
19.66 19.96
19.60 20.00
3.00 3.51
9.27 9.53
9.27 9.52
0.127 REF
0.254 REF
0.381 REF
T
SEATING
PLANE
CASE 465 - 06
ISSUE F
NI - 780
MRF21085R3
F STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
4X U
(FLANGE)
B
4X Z
(LID)
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M − 1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
B
(FLANGE)
2
D
bbb M T A M
2X K
BM
H
E
A
N (LID)
ccc M T A M B M
M (INSULATOR)
bbb M T A M B M
R (LID)
ccc M T A M B M
S (INSULATOR)
aaa M T A M B M
A
(FLANGE)
C
3
F
T
SEATING
PLANE
CASE 465A - 06
ISSUE F
NI - 780S
MRF21085SR3, MRF21085LSR3
INCHES
DIM MIN MAX
A 0.805 0.815
B 0.380 0.390
C 0.125 0.170
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
H 0.057 0.067
K 0.170 0.210
M 0.774 0.786
N 0.772 0.788
R 0.365 0.375
S 0.365 0.375
U − − − 0.040
Z − − − 0.030
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MILLIMETERS
MIN MAX
20.45 20.70
9.65 9.91
3.18 4.32
12.57 12.83
0.89 1.14
0.08 0.15
1.45 1.70
4.32 5.33
19.61 20.02
19.61 20.02
9.27 9.53
9.27 9.52
− − − 1.02
− − − 0.76
0.127 REF
0.254 REF
0.381 REF
MOTOROLA RF DEVICE DATA
MRF21085R3 MRF21085SR3 MRF21085LSR3
For More Information On This Product,
Go to: www.freescale.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MRF21085SR3.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MRF21085SR3 | RF Power Field Effect Transistors | Motorola Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |