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PDF 2SK0662 Data sheet ( Hoja de datos )
| Número de pieza | 2SK0662 | |
| Descripción | Silicon N-Channel Junction FET | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Silicon Junction FETs (Small Signal)
2SK0662 (2SK662)
Silicon N-Channel Junction FET
For low-frequency amplification
I Features
G High mutual conductance gm
G Low noise type
G S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Drain to Source voltage
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Junction temperature
Storage temperature
VDSX
VGDO
ID
IG
PD
Tj
Tstg
30
−30
20
10
150
125
−55 to +125
Unit
V
V
mA
mA
mW
°C
°C
0.3+–00..01
3
12
(0.65) (0.65)
1.3±0.1
2.0±0.2
10°
unit: mm
0.15+–00..0150
1: Source
2: Drain
3: Gate
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol (Example): 1O
❘I Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min typ max Unit
Drain to Source cut-off current
Gate to Source leakage current
Gate to Source cut-off voltage
IDSS*
IGSS
VGSC
VDS = 10V, VGS = 0
VGS = −30V, VDS = 0
VDS = 10V, ID = 10µA
0.5
− 0.1
12
−100
−1.5
mA
nA
V
Mutual conductance
gm
VDS = 10V, ID = 0.5mA, f = 1kHz
VDS = 10V, VGS = 0, f = 1kHz
4
4
mS
Input capacitance (Common Source) Ciss
Reverse transfer capacitance (Common Source) Crss
VDS = 10V, VGS = 0, f = 1MHz
14 p F
3.5 p F
Noise figure
NV VDS = 30V, ID = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
60
mV
* IDSS rank classification
Runk
P
IDSS (mA)
Marking Symbol
0.5 to 3
1OP
Q
2 to 6
1OQ
R
4 to 12
1OR
Note) The part number in the parenthesis shows conventional part number.
251
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SK0662.PDF ] | |
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