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PDF IRL3102 Data sheet ( Hoja de datos )
| Número de pieza | IRL3102 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PRELIMINARY
l Advanced Process Technology
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-
220 contribute to its wide acceptance throughout the
industry.
G
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
VGSM
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
PD- 9.1694A
IRL3102
HEXFET® Power MOSFET
D
VDSS = 20V
RDS(on) = 0.013Ω
ID = 61A
S
TO-220AB
Max.
61
39
240
89
0.71
± 10
14
220
35
8.9
5.0
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
1.4
–––
62
Units
A
W
W/°C
V
V
mJ
A
mJ
V/ns
°C
Units
°C/W
11/18/97
1 page  
70
60
50
40
30
20
10
0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
IRL3102
500
ID
TOP
16A
22A
400 BOTTOM 35A
300
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature( °C)
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
1
D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRL3102.PDF ] | |
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