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Número de pieza | UPD444016-Y | |
Descripción | 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION | |
Fabricantes | NEC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de UPD444016-Y (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
No Preview Available ! PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444016-Y
4M-BIT CMOS FAST SRAM
256K-WORD BY 16-BIT
EXTENDED TEMPERATURE OPERATION
Description
The µPD444016-Y is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM.
Operating supply voltage is 5.0 V ± 0.5 V.
The µPD444016-Y is packaged in 44-PIN PLASTIC TSOP (II).
Features
• 262,144 words by 16 bits organization
• Fast access time : 8, 10, 12 ns (MAX.)
• Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16)
• Output Enable input for easy application
• Single +5.0 V power supply
Ordering Information
Part number
Package
µPD444016G5-8Y-7JF
µPD444016G5-10Y-7JF
µPD444016G5-12Y-7JF
44-PIN PLASTIC TSOP (II)
(10.16 mm (400))
(Normal bent)
Access time
ns (MAX.)
8
10
12
Supply current mA (MAX.)
At operating
At standby
220 10
200
190
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M15391EJ1V0DS00 (1st edition)
Date Published February 2001 NS CP(K)
Printed in Japan
©
2001
1 page µPD444016-Y
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
Parameter
Symbol
Test condition
MIN.
TYP.
Input leakage current
ILI VIN = 0 V to VCC
–2
Output leakage current
ILO VI/O = 0 V to VCC, /CS = VIH or /OE = VIH
–2
or /WE = VIL or /LB = VIH or /UB = VIH
Operating supply current
ICC /CS = VIL,
Cycle time : 8 ns
II/O = 0 mA,
Cycle time : 10 ns
Minimum cycle time Cycle time : 12 ns
Standby supply current
ISB /CS = VIH, VIN = VIH or VIL
ISB1 /CS ≥ VCC – 0.2 V,
VIN ≤ 0.2 V or VIN ≥ VCC – 0.2 V
High level output voltage
VOH IOH = –4.0 mA
2.4
Low level output voltage
VOL IOL = +8.0 mA
Remarks 1. VIN : Input voltage
VI/O : Input / Output voltage
2. These DC characteristics are in common regardless of product classification.
MAX.
+2
+2
220
200
190
40
10
0.4
Unit
µA
µA
mA
mA
V
V
Capacitance (TA = 25 °C, f = 1 MHz)
Parameter
Symbol
Test condition
Input capacitance
Input / Output capacitance
CIN VIN = 0 V
CI/O
VI/O = 0 V
Remarks 1. VIN : Input voltage
VI/O : Input / Output voltage
2. These parameters are not 100% tested.
MIN.
TYP.
MAX.
6
8
Unit
pF
pF
Preliminary Data Sheet M15391EJ1V0DS
5
5 Page µPD444016-Y
Write Cycle Timing Chart 3 (/LB, /UB Controlled)
Address (Input)
/CS (Input)
/WE (Input)
/LB, /UB (Input)
tAS
tWC
tAW
tCW
tWP
I/O (Input)
High impedance
tBW
tDW
Data in
tWR
tDH
High impedance
Cautions 1. /CS or /WE should be fixed to high level during address transition.
2. Do not input data to the I/O pins while they are in the output state.
Remark Write operation is done during the overlap time of a low level /CS, /LB and/or /UB, and a low level /WE.
Preliminary Data Sheet M15391EJ1V0DS
11
11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet UPD444016-Y.PDF ] |
Número de pieza | Descripción | Fabricantes |
UPD444016-Y | 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION | NEC |
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