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What is GM71VS16163CL?

This electronic component, produced by the manufacturer "Hynix Semiconductor", performs the same function as "(GM71VS16163CL / GM71V16163C) 1M x 16-Bit CMOS DRAM".


GM71VS16163CL Datasheet PDF - Hynix Semiconductor

Part Number GM71VS16163CL
Description (GM71VS16163CL / GM71V16163C) 1M x 16-Bit CMOS DRAM
Manufacturers Hynix Semiconductor 
Logo Hynix Semiconductor Logo 


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GM71V16163C
GM71VS16163CL
1,048,576 WORDS x 16 BIT
CMOS DYNAMIC RAM
Description
The GM71V(S)16163C/CL is the new generation
dynamic RAM organized 1,048,576 x 16 bit.
GM71V(S)16163C/CL has realized higher density,
higher performance and various functions by utilizing
advanced CMOS process technology. The
GM71V(S)16163C/CL offers Extended Data
out(EDO) Mode as a high speed access mode.
Multplexed address inputs permit the
GM71V(S)16163C/CL to be packaged in standard
400 mil 42pin plastic SOJ, and standard 400mil
44(50)pin plastic TSOP II. The package size provides
high system bit densities and is compatible with
widely available automated testing and insertion
equipment.
Pin Configuration
Features
* 1,048,576 Words x 16 Bit Organization
* Extended Data Out Mode Capability
* Single Power Supply (3.3V+/-0.3V)
* Fast Access Time & Cycle Time (Unit: ns)
t t t tRAC CAC RC
HPC
GM71V(S)16163C/CL-5 50 13 84 20
GM71V(S)16163C/CL-6 60 15 104 25
GM71V(S)16163C/CL-7 70 18 124 30
GM71V(S)16163C/CL-8 80 20 144 35
* Low Power
Active : 396/360/324/288mW (MAX)
Standby : 7.2mW (MAX)
0.83mW (L-series : MAX)
* RAS Only Refresh, CAS before RAS Refresh,
Hidden Refresh Capability
* All inputs and outputs TTL Compatible
* 4096 Refresh Cycles/64ms
* 4096 Refresh Cycles/128ms (L-series)
* Self Refresh Operation (L-version)
* Battery Back Up Operation (L-series)
* 2 CAS byte Control
42 SOJ
44(50) TSOP II
VCC 1
42 VSS
I/O0 2
41 I/O15
I/O1 3
40 I/O14
I/O2 4
39 I/O13
I/O3 5
38 I/O12
VCC 6
37 VSS
I/O4 7
36 I/O11
I/O5 8
35 I/O10
I/O6 9
34 I/O9
I/O7 10
33 I/O8
NC 11
32 NC
NC 12
31 LCAS
WE 13
30 UCAS
RAS 14
29 OE
A11 15
A10 16
mA0 17
oA1 18
.cA2 19
A3 20
uVCC 21
www.datasheet4Rev 0.1 / Apr’01
28 A9
27 A8
26 A7
25 A6
24 A5
23 A4
22 VSS
(Top View)
VCC 1
I/O0 2
I/O1 3
I/O2 4
I/O3 5
VCC 6
I/O4 7
I/O5 8
I/O6 9
I/O7 10
NC 11
NC 15
NC 16
WE 17
RAS 18
A11 19
A10 20
A0 21
A1 22
A2 23
A3 24
VCC 25
50 VSS
49 I/O15
48 I/O14
47 I/O13
46 I/O12
45 VSS
44 I/O11
43 I/O10
42 I/O9
41 I/O8
40 NC
36 NC
35 LCAS
34 UCAS
33 OE
32 A9
31 A8
30 A7
29 A6
28 A5
27 A4
26 VSS

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GM71VS16163CL equivalent
Capacitance (VCC = 3.3V+/-0.3V, TA = 25C)
Symbol
Parameter
GM71V16163C
GM71VS16163CL
Min Max Unit Note
CI1 Input Capacitance (Address)
- 5 pF 1
CI2 Input Capacitance (Clocks)
- 7 pF 1
CI/O Output Capacitance (Data-In/Out)
- 7 pF 1, 2
Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. CAS = VIH to disable DOUT.
AC Characteristics (VCC = 3.3V+/-0.3V, TA = 0 ~ +70C, Vss = 0V) Note 1, 2, 18, 19, 20
Test Conditions
Input rise and fall times : 2 ns
Input timing reference levels : 0.8V, 2.0V
Output load : 1TTL gate + CL (100 pF)
(Including scope and jig)
Output timing reference levels : 0.8V, 2.0V
Read, Write, Read-Modify-Write and Refresh Cycles (Common Parameters)
Symbol
Parameter
GM71V(S)16163 GM71V(S)16163 GM71V(S)16163 GM71V(S)16163
C/CL-5
C/CL-6
C/CL-7
C/CL-8
Unit Note
Min Max Min Max Min Max Min Max
tRC Random Read or Write Cycle Time
84 - 104 - 124 - 144 - ns
tRP RAS Precharge Time
30 - 40 - 50 - 60 - ns
tCP CAS Precharge Time
8 - 10 - 13 - 15 - ns
tRAS RAS Pulse Width
tCAS CAS Pulse Width
tASR Row Address Set up Time
tRAH Row Address Hold Time
tASC Column Address Set-up Time
tCAH Column Address Hold Time
tRCD RAS to CAS Delay Time
tRAD RAS to Column Address Delay Time
tRSH RAS Hold Time
tCSH CAS Hold Time
tCRP CAS to RAS Precharge Time
tOED OE to DIN Delay Time
tDZO OE Delay Time from DIN
tDZC CAS Delay Time from DIN
tT TransitionTime (Rise and Fall)
50 10,000
8 10,000
0-
8-
0-
8-
12 37
10 25
10 -
35 -
5-
13 -
0-
0-
2 50
60 10,000 70 10,000 80 10,000 ns
10 10,000 13 10,000 15 10,000 ns
0-
0-
0 - ns
10 - 10 - 10 - ns
0-
10 -
14 45
12 30
0-
13 -
14 52
12 35
0 - ns
15 - ns
20 60 ns
15 40 ns
13 -
40 -
13 -
45 -
18 - ns
50 - ns
5-
5-
5 - ns
15 - 18 - 20 - ns
0-
0-
2 50
0-
0-
2 50
0 - ns
0 - ns
2 50 ns
21
21
3
4
23
22
5
6
6
7
Rev 0.1 / Apr’01


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GM71VS16163CL electronic component.


Information Total 13 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
GM71VS16163CLThe function is (GM71VS16163CL / GM71V16163C) 1M x 16-Bit CMOS DRAM. Hynix SemiconductorHynix Semiconductor
GM71VS16163CLThe function is (GM71VS16163CL / GM71V16163C) 1M x 16-Bit CMOS DRAM. Hynix SemiconductorHynix Semiconductor

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