GM71V65163A Datasheet PDF - Hynix Semiconductor
Part Number | GM71V65163A | |
Description | (GM71VS65163AL / GM71V65163A) 4M x 16-Bit CMOS DRAM | |
Manufacturers | Hynix Semiconductor | |
Logo | ||
There is a preview and GM71V65163A download ( pdf file ) link at the bottom of this page. Total 24 Pages |
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GM71V65163A
GM71VS65163AL
4,196,304 WORDS x 16 BIT
CMOS DYNAMIC RAM
Description
Pin Configuration
The GM71V(S)65163A/AL is the new generation
dynamic RAM organized 4,196,304 words by 16
bits. The GM71V(S)65163A/AL utilizes advanced
CMOS Silicon Gate Process Technology as well as
advanced circuit techniques for wide operating
margins, both internally and to the system user.
System oriented features include single power supply
of 3.3V+/-10% tolerance, direct interfacing
capability with high performance logic families such
as Schottky TTL.
The GM71V(S)65163A/AL offers Extended Data
Out(EDO) Mode as a high speed access mode.
50 SOJ / TSOP ¥±
VCC
IO0
1
2
IO1 3
IO2 4
IO3 5
VCC 6
IO4 7
IO5 8
IO6 9
IO7 10
NC 11
VCC 12
Features
/WE 13
/RAS 14
* 4,196,304 Words x 16 Bit
* Extended Data Out (EDO) Mode Capability
* Fast Access Time & Cycle Time
(Unit: ns)
NC 15
NC 16
NC 17
NC 18
A0 19
tRAC tAA tCAC tRC
tHPC
A1 20
A2 21
GM71V(S)65163A/AL-5 50 25 13 90 20
GM71V(S)65163A/AL-6 60 30 15 110 25
A3 22
A4 23
A5 24
VCC 25
*Power dissipation
- Active : 720mW/648mW(MAX)
- Standby : 1.8 mW ( CMOS level : MAX )
0.54mW ( L-Version : MAX)
*EDO page mode capability
*Access time : 50ns/60ns (max)
*Refresh cycles
- RAS only Refresh
4096 cycles/64 §Â (GM71V65163A)
4096 cycles/128§Â (GM71VS65163AL)(L_Version)
*CBR & Hidden Refresh
4096 cycles/64 §Â (GM71V65163A)
m4096 cycles/128 §Â (GM71VS65163AL)( L-Version )
o*4 variations of refresh
.c-RAS-only refresh
u-CAS-before-RAS refresh
t4-Hidden refresh
-Self refresh (L-Version)
ee*Single Power Supply of 3.3V+/-10 % with a built-in VBB generator
www.datash*Battery Back Up Operation ( L-Version )
(Top View)
1
50 VSS
49 IO15
48 IO14
47 IO13
46 IO12
45 VSS
44 IO11
43 IO10
42 IO9
41 IO8
40 NC
39 VSS
38 /LCAS
37 /UCAS
36 /OE
35 NC
34 NC
33 NC
32 A11
31 A10
30 A9
29 A8
28 A7
27 A6
26 VSS
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LG Semicon
GM71V65163A
GM71VS65163AL
Read Cycles
Symbol
Parameter
tRAC Access Time from RAS
tCAC Access Time from CAS
tAA Access Time from Column Address
tOAC Access Time from OE
tRCS Read Command Set-up Time
tRCH Read Command Hold Time to CAS
tRRH Read Command Hold Time to RAS
tRAL Column Address to RAS Lead Time
tCAL Column Address to CAS Lead Time
tOFF Output Buffer Turn-off Delay Time from CAS
tOEZ Output Buffer Turn-off Delay Time from OE
tCDD CAS to DIN Delay Time
tRDD RAS to DIN Delay Time
tWDD
tOFR
tWEZ
WE to DIN Delay Time
Output Buffer Turn-off Delay Time from RAS
Output Buffer Turn-off Delay Time from WE
tOH Output Data Hold Time
tOHR Output Data Hold Time from RAS
tRCHR Read Command Hold Time from RAS
tOHO Output data hold time from OE
tCLZ CAS to Output in Low - Z
GM71V(S)65163A/AL-5 GM71V(S)65163A/AL-6
Unit
Min Max Min Max
Notes
- 50 - 60 §À 8,9
- 13 - 15 §À 9,10,17
- 25 - 30 §À 9,11,17
- 13 - 15 §À 9
0 - 0 - §À 21
0 - 0 - §À 12,22
0 - 0 - §À 12
25 - 30 - §À
15 - 18 - §À
- 13 - 15 §À 13,26
- 13 - 15 §À 13
13 - 15 - §À 5
13 - 15 - §À
13 - 15 - §À
- 13 - 15 §À 13,26
- 13 - 15 §À 13
3 - 3 - §À 26
3 - 3 - §À 26
50 - 60 - §À
3 - 3 - §À
0 - 0 - §À
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GM71V65163A electronic component. |
Information | Total 24 Pages | |
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Download | [ GM71V65163A.PDF Datasheet ] |
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Featured Datasheets
Part Number | Description | MFRS |
GM71V65163A | The function is (GM71VS65163AL / GM71V65163A) 4M x 16-Bit CMOS DRAM. Hynix Semiconductor | |
GM71V65163C | The function is (GM71VS65163CL / GM71V65163C) 4M x 16-Bit MOS DRAM. Hynix Semiconductor | |
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