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Datasheet HCPL-0452 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | HCPL-0452 | SINGLE CHANNEL HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE CHANNEL HIGH SPEED TRANSISTOR OPTOCOUPLERS
HCPL-0452
DESCRIPTION
The HCPL-0500, HCPL-0501 and HCPL-0452 optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor housed in a compact 8-pin smalloutline package. A separate connection for the bias of the ph |  Fairchild Semiconductor | transistor |
| 2 | HCPL-0452 | Single Channel/ High Speed Optocouplers H Single Channel, High Speed Optocouplers Technical Data
6N135/6 HCNW135/6 HCNW4502/3 HCPL-0452/3 HCPL-0500/1 HCPL-4502/3
Features
• 15 kV/µs Minimum Common Mode Transient Immunity at VCM = 1500 V (4503/0453) • High Speed: 1 Mb/s • TTL Compatible • Available in 8-Pin DIP, SO-8, Widebody Pa | .gif){kind=small} Agilent(Hewlett-Packard) | data |
| 3 | HCPL-0452 | Single Channel / High Speed Optocouplers Single Channel, High Speed Optocouplers Technical Data
Features
• 15 kV/µs Minimum Common Mode Transient Immunity at VCM = 1500 V (4503/0453) • High Speed: 1 Mb/s • TTL Compatible • Available in 8-Pin DIP, SO-8, Widebody Packages • Open Collector Output • Guaranteed Performance from Te |  Hewlett-Packard | data |
| 4 | HCPL-0452 | High Speed Optocouplers HCNW4502/3 HCPL-0452/0453/4502/4503 Single Channel, High Speed Optocouplers
Data Sheet
Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxE denotes a lead-free product
Description
These diode-transistor optoc ouplers use an insulating layer between a LED and an |  Avago | data |
HCP Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | HCP | Switchmode Power Supplies
HCP Series
· Solid Aluminium Electrolytic Capacitor with Conductive Polymer · Ultra low ESR · High Ripple Current · Switchmode Power Supplies, Computer, DC/DC Converter · Noise Suppression in Smoothing / High-Frequency Circuits
lower ESR miniaturized
CD 284 XY
HCP
HPM
I  Jianghai Europe GmbH data | | |
| 2 | HCP10C60 | Silicon Controlled Rectifier
Shantou Huashan Electronic Devices Co.,Ltd.
HCP10C60
Silicon Controlled Rectifier
¨€
Features
* Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current(IT(RMS)=10A) * Low On-State Voltage (1.4V(Typ.)@ ITM) * Non-isolated Type
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General Description
Standard  ETC rectifier | | |
| 3 | HCP12C60 | Silicon Controlled Rectifier
Shantou Huashan Electronic Devices Co.,Ltd.
HCP12C60
Silicon Controlled Rectifier
█ Features
* Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current(IT(RMS)=12A) * Low On-State Voltage (1.3V(Typ.)@ ITM) * Non-isolated Type
█ General Description
Standard gate t ETC rectifier | | |
| 4 | HCP12NK65V | N-Channel MOSFET HCP12NK65V
Apr 2014
HCP12NK65V
650V N-Channel Super Junction MOSFET
BVDSS = 650 V RDS(on) typ = 0.34 ȍ ID = 12 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics �  SemiHow mosfet | | |
| 5 | HCP20C60 | Silicon Controlled Rectifier
Shantou Huashan Electronic Devices Co.,Ltd.
HCP20C60
Silicon Controlled Rectifier
█ Features
* Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current(IT(RMS)=20A) * Low On-State Voltage (1.3V(Typ.)@ ITM) * Non-isolated Type
█ General Description
Standard gate t  SHANTOU HUASHAN ELECTRONIC DEVICES rectifier | | |
| 6 | HCP20NT60V | N-Channel MOSFET HCP20NT60V
Apr 2014
HCP20NT60V
600V N-Channel Super Junction MOSFET
BVDSS = 600 V RDS(on) typ = 0.17 ȍ ID = 20 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics � SemiHow mosfet | | |
| 7 | HCP60R750V | 600V N-Channel Super Junction MOSFET HCP60R750V
HCP60R750V
600V N-Channel Super Junction MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14 nC (Typ.) Extended Safe O SemiHow mosfet | |
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