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PDF GM71C4403C Data sheet ( Hoja de datos )

Número de pieza GM71C4403C
Descripción 1M x 4 Bit CMOS DRAM
Fabricantes Hynix Semiconductor 
Logotipo Hynix Semiconductor Logotipo



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No Preview Available ! GM71C4403C Hoja de datos, Descripción, Manual

LG Semicon Co.,Ltd.
Description
The GM71C4403C is the new generation dynamic
RAM organized 1,048,576 words x 4 bit.
GM71C4403C has realized higher density, higher
performance and various functions by utilizing
advanced CMOS process technology. The
GM71C4403C offers Extended Data Out (EDO)
Mode as a high speed access Mode. Multiplexed
address inputs permit the GM71C4403C to be
packaged in a standard 300mil 20(26) pin plastic
SOJ , and standard 300mil 20(26) pin plastic TSOP
II. The package size provides high system bit
densities and is compatible with widely available
automated testing and insertion equipment. System
oriented features include single power supply of
5V+/-10% tolerance, direct interfacing capability
with high performance logic families such as
Schottky TTL.
GM71C4403C
1,048,576 WORDS x 4BIT
CMOS DYNAMIC RAM
Features
* 1,048,576 Words x 4 Bit Organization
* Extended Data Out Mode Capability
* Single Power Supply (5V+/-10%)
* Fast Access Time & Cycle Time
(Unit: ns)
tRAC tCAC tRC
tHPC
GM71C4403C-60
60 15 104 25
GM71C4403C-70
70 18 124 30
GM71C4403C-80
80 20 144 35
* Low Power
Active : 605/550/495mW (MAX)
Standby : 5.5mW (CMOS level : MAX)
* RAS Only Refresh, CAS before RAS Refresh,
Hidden Refresh Capability
* All inputs and outputs TTL Compatible
*1024 Refresh Cycles/16ms
Pin Configuration
20 (26) SOJ
I/O1 1
I/O2 2
WE 3
RAS 4
A9 5
A0 6
A1 7
A2 8
A3 9
VCC 10
20 VSS
19 I/O4
18 I/O3
17 CAS
16 OE
15 A8
14 A7
13 A6
12 A5
11 A4
(Top View)
20 (26) TSOP II
I/O1 1
I/O2 2
WE 3
RAS 4
A9 5
20 VSS
VSS 20
19 I/O4 I/O4 19
18 I/O3 I/O3 18
17 CAS CAS 17
16 OE
OE 16
1 I/O1
2 I/O2
3 WE
4 RAS
5 A9
A0 6
A1 7
A2 8
A3 9
VCC 10
15 A8
14 A7
13 A6
12 A5
11 A4
A8 15
A7 14
A6 13
A5 12
A4 11
6 A0
7 A1
8 A2
9 A3
10 VCC
NORMAL TYPE
REVERSE TYPE
(Top View)
1

1 page




GM71C4403C pdf
LG Semicon
Read Cycle
Symbol
Parameter
tRAC
tCAC
tAA
tOAC
tRCS
tRCH
tRRH
tRAL
tCAL
tOFF
tOEZ
tCDD
tRDD
tWDD
tOEP
tOFR
tWEZ
tOH
tOHR
tRCHR
Access Time from RAS
Access Time from CAS
Access Time from Address
Access Time from OE
Read Command Setup Time
Read Command Hold Time to CAS
Read Command Hold Time to RAS
Column Address to RAS Lead Time
Column Address to CAS Lead Time
Output Buffer Turn-off Time
Output Buffer Turn-off Time to OE
CAS to DIN Delay Time
RAS to DIN Delay Time
WE to DIN Delay Time
OE Pulse width
Output Buffer Turn-off Time to RAS
Output Buffer Turn-off Time to WE
Output Data Hold Time
Output Data Hold Time form RAS
Read Command Hold Time from
RAS
GM71C4403C
GM71C4403 GM71C4403 GM71C4403
C-60
C-70
C-80
Min Max Min Max Min Max
Unit
Note
- 60 - 70 - 80 ns 2,3,17
- 15 - 18 - 20 ns 3, 4, 13,
17
- 30 - 35 - 40 ns 3, 5, 13,
17
- 15 - 18 - 20 ns 3,17
0 - 0 - 0 - ns
0 - 0 - 0 - ns 18
0 - 0 - 0 - ns 18
30 - 35 - 40 - ns
18 - 23 - 28 - ns
- 15 - 15 - 15 ns 6,21
- 15 - 15 - 15 ns 6
15 - 18 - 20 - ns
15 - 18 - 20 - ns
15 - 18 - 20 - ns
15 - 18 - 20 - ns
- 15 - 15
- 15 - 15
- 15
- 15
ns 6,21
ns 6
5 - 5 - 5 - ns
5 - 5 - 5 - ns
60 - 70 - 80 - ns
5

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