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Número de pieza | UPD4481181 | |
Descripción | (UPD4481161/1181/1321/1361) 8M-BIT ZEROSB SRAM FLOW THROUGH OPERATION | |
Fabricantes | NEC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de UPD4481181 (archivo pdf) en la parte inferior de esta página. Total 28 Páginas | ||
No Preview Available ! DATA SHEET
MOS INTEGRATED CIRCUIT
µPD4481161, 4481181, 4481321, 4481361
8M-BIT ZEROSBTM SRAM
FLOW THROUGH OPERATION
Description
The µPD4481161 is a 524,288-word by 16-bit, the µPD4481181 is a 524,288-word by 18-bit, the µPD4481321 is a
262,144-word by 32-bit and the µPD4481361 is a 262,144-word by 36-bit ZEROSB static RAM fabricated with
advanced CMOS technology using full CMOS six-transistor memory cell.
The µPD4481161, µPD4481181, µPD4481321 and µPD4481361 are optimized to eliminate dead cycles for read to
write, or write to read transitions. These ZEROSB static RAMs integrate unique synchronous peripheral circuitry, 2-bit
burst counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the
single clock input (CLK).
The µPD4481161, µPD4481181, µPD4481321 and µPD4481361 are suitable for applications which require
synchronous operation, high speed, low voltage, high density and wide bit configuration, such as buffer memory.
ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State
(“Sleep”). In the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes
normal operation.
The µPD4481161, µPD4481181, µPD4481321 and µPD4481361 are packaged in 100-pin PLASTIC LQFP with a
1.4 mm package thickness for high density and low capacitive loading.
Features
• Low voltage core supply : VDD = 3.3 ± 0.165 V (-A65, -A75, -A85, -A65Y, -A75Y, -A85Y)
VDD = 2.5 ± 0.125 V (-C75, -C85, -C75Y, -C85Y)
• Synchronous operation
• Operating temperature : TA = 0 to 70 °C (-A65, -A75, -A85, -C75, -C85)
TA = −40 to +85 °C (-A65Y, -A75Y, -A85Y, -C75Y, -C85Y)
• 100 percent bus utilization
• Internally self-timed write control
• Burst read / write : Interleaved burst and linear burst sequence
• Fully registered inputs and outputs for flow through operation
• All registers triggered off positive clock edge
• 3.3V or 2.5V LVTTL Compatible : All inputs and outputs
• Fast clock access time : 6.5 ns (133 MHz), 7.5 ns (117 MHz), 8.5 ns (100 MHz)
• Asynchronous output enable : /G
• Burst sequence selectable : MODE
• Sleep mode : ZZ (ZZ = Open or Low : Normal operation)
• Separate byte write enable : /BW1 to /BW4 (µPD4481321 and µPD4481361)
/BW1 and /BW2 (µPD4481161 and µPD4481181)
• Three chip enables for easy depth expansion
• Common I/O using three state outputs
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. M15561EJ3V0DS00 (3rd edition)
Date Published December 2002 NS CP(K)
Printed in Japan
The mark shows major revised points.
2001
1 page µPD4481161, 4481181, 4481321, 4481361
Pin Identifications
[µPD4481161GF, µPD4481181GF]
Symbol
Pin No.
A0 to A18
37, 36, 35, 34, 33, 32, 100, 99, 82, 81,
44, 45, 46, 47, 48, 49, 50, 83, 80
I/O1 to I/O16
58, 59, 62, 63, 68, 69, 72, 73, 8, 9, 12, 13,
I/OP1, NC Note
I/OP2, NC Note
18, 19, 22, 23
74
24
ADV
85
/CE, CE2, /CE2
98, 97, 92
/WE 88
/BW1, /BW2
93, 94
/G 86
CLK 89
/CKE
87
MODE
31
ZZ
VDD
VSS
VDDQ
VSSQ
NC
64
15, 16, 41, 65, 91
14, 17, 40, 66, 67, 90
4, 11, 20, 27, 54, 61, 70, 77
5, 10, 21, 26, 55, 60, 71, 76
1, 2, 3, 6, 7, 25, 28, 29, 30, 38, 39, 42, 43,
51, 52, 53, 56, 57, 75, 78, 79, 84, 95, 96
Description
Synchronous Address Input
Synchronous Data In,
Synchronous / Asynchronous Data Out
Synchronous Data In (Parity),
Synchronous / Asynchronous Data Out (Parity)
Synchronous Address Load / Advance Input
Synchronous Chip Enable Input
Synchronous Write Enable Input
Synchronous Byte Write Enable Input
Asynchronous Output Enable Input
Clock Input
Synchronous Clock Enable Input
Asynchronous Burst Sequence Select Input
Have to tied to VDD or VSS during normal operation
Asynchronous Power Down State Input
Power Supply
Ground
Output Buffer Power Supply
Output Buffer Ground
No Connection
Note NC (No Connection) is used in the µPD4481161GF.
I/OP1 and I/OP2 are used in the µPD4481181GF.
Data Sheet M15561EJ3V0DS
5
5 Page µPD4481161, 4481181, 4481321, 4481361
Asynchronous Truth Table
Operation
/G
Read Cycle
L
Read Cycle
H
Write Cycle
Deselected
×
×
Remark × : don’t care
I/O
Dout
High-Z
High-Z, Din
High-Z
Synchronous Truth Table
Operation
/CE CE2 /CE2 ADV /WE /BWs /CKE CLK
I/O Address Note
Deselected
Deselected
Deselected
Continue Deselected
H × × L × × L L → H High-Z None 1
× L × L × × L L → H High-Z None 1
× × H L × × L L → H High-Z None 1
× × × H × × L L → H High-Z None 1
Read Cycle / Begin Burst
L H L L H × L L → H Dout External
Read Cycle / Continue Burst
×
×
×
H
×
×
L L → H Dout
Next
Write Cycle / Begin Burst
L H L L L L L L → H Din External
Write Cycle / Continue Burst
×
×
×H×
L
L L→H
Din
Next
Write Cycle / Write Abort
L H L L L H L L → H High-Z External
Write Cycle / Write Abort
× × × H × H L L → H High-Z Next
Stall / Ignore Clock Edge
× × × × × × H L→H
− Current 2
Notes
1. Deselect status is held until new “Begin Burst” entry.
2. If an Ignore Clock Edge command occurs during a read operation, the I/O bus will remain active (low
impedance). If it occurs during a write cycle, the bus will remain high impedance. No write operation will
be performed during the Ignore Clock Edge cycle.
Remarks 1. × : don’t care
2. /BWs = L means any one or more byte write enables (/BW1, /BW2, /BW3 or /BW4) are LOW.
/BWs = H means all byte write enables (/BW1, /BW2, /BW3 or /BW4) are HIGH.
Data Sheet M15561EJ3V0DS
11
11 Page |
Páginas | Total 28 Páginas | |
PDF Descargar | [ Datasheet UPD4481181.PDF ] |
Número de pieza | Descripción | Fabricantes |
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