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PDF IRL2203S Data sheet ( Hoja de datos )
| Número de pieza | IRL2203S | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PRELIMINARY
PD 9.1091A
IRL2203S
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Surface Mount
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
G
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
D
VDSS = 30V
RDS(on) = 0.007Ω
ID = 100A
S
D2Pak
Max.
100
71
400
3.8
130
0.83
± 20
390
60
13
1.2
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
1.2
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1 page  
100
LIM ITED BY PACKA GE
80
60
40
20
0A
25 50 75 100 125 150 175
TC , C ase T em perature (°C )
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
VDS
VGS
RG
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
IRL2203S
RD
D.U.T.
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0 .2 0
0 .1 0
0 . 1 0.05
0 .0 2
0 .0 1
0.01
0.00001
S INGLE PULS E
(THER MAL R ESP ONS E)
0.0001
PD M
Notes:
1. D uty factor D = t1 / t2
t1
t2
2. P ea k TJ = P D M x Z thJ C + T C
0.001
0.01
0.1
1
t1 , Rectan gular Pulse Du ration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A
10
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRL2203S.PDF ] | |
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