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PDF UPA2717GR Data sheet ( Hoja de datos )
| Número de pieza | UPA2717GR | |
| Descripción | SWITCHING N- AND P-CHANNEL POWER MOS FET | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2717GR
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The µ PA2717GR is P-Channel MOS Field Effect Transistor
designed for power management applications of notebook
computers and Li-ion battery protection circuit.
FEATURES
• Low on-state resistance
RDS(on)1 = 5.5 mΩ MAX. (VGS = –10 V, ID = –7.5 A)
RDS(on)2 = 8.9 mΩ MAX. (VGS = –4.5 V, ID = –7.5 A)
• Low Ciss: Ciss = 3550 pF TYP.
• Built-in gate protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
µ PA2717GR
PACKAGE
Power SOP8
PACKAGE DRAWING (Unit: mm)
85
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8 : Drain
14
5.37 MAX.
6.0 ±0.3
4.4
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.8
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
–30
V
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation Note2
Total Power Dissipation Note3
VGSS
ID(DC)
ID(pulse)
PT1
PT2
m20
m15
m150
2
2
V
A
A
W
W
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note4
Single Avalanche Energy Note4
Tstg –55 to + 150 °C
IAS –15
A
EAS 22.5 mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
3. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm, PW = 10 sec
4. Starting Tch = 25°C, VDD = –15 V, RG = 25 Ω, L = 100 µH, VGS = –20 → 0 V
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16950EJ1V0DS00 (1st edition)
Date Published July 2004 NS CP(K)
Printed in Japan
2004
1 page  
µ PA2717GR
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
15
ID = −7.5 A
Puls ed
10
V GS = −4.0 V
−4.5 V
−10 V
5
0
- 50
0 50 100
Tch - Channel Temperature - °C
150
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
Crss
100
VGS = 0 V
f = 1 MHz
10
- 0.1
-1
- 10
VDS - Drain to Source Voltage - V
- 100
10000
1000
SWITCHING CHARACTERISTICS
VDD = −15 V
VGS = −10 V
RG = 10 Ω
td(off)
tf
100
10
tr
td(on)
1
-0.1
-1 -10
ID - Drain Current - A
-100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
- 30 - 15
ID =15 A
VDD = −6 V
- 20 −15 V
−24 V
- 10
- 10
0
0
VGS
VDS
50 100
QG - Gate Charge - nC
-5
0
150
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
Pulsed
VGS = −10 V
10
1
0V
0.1
0.01
0
0.2 0.4 0.6 0.8 1 1.2 1.4
VF(S-D) - Source to Drain Voltage - V
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
VGS = 0 V
di/dt = 50 A/µs
10
0.1 1
10
IF - Diode Forward Current - A
100
Data Sheet G16950EJ1V0DS
5
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| PDF Descargar | [ Datasheet UPA2717GR.PDF ] | |
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