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PDF UPA2755GR Data sheet ( Hoja de datos )
| Número de pieza | UPA2755GR | |
| Descripción | SWITCHING N- AND P-CHANNEL POWER MOS FET | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2755GR
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The µ PA2755GR is Dual N-channel MOS Field Effect
Transistor designed for DC/DC converters and power
management applications of notebook computers.
FEATURES
• Dual chip type
• Low on-state resistance
RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 4.0 A)
RDS(on)2 = 29 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)
• Low Ciss: Ciss = 650 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
µ PA2755GR
PACKAGE
Power SOP8
PACKAGE DRAWING (Unit: mm)
85
14
5.37 MAX.
1 : Source 1
2 : Gate 1
7, 8: Drain 1
3 : Source 2
4 : Gate 2
5, 6: Drain 2
6.0 ±0.3
4.4
0.8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
30 V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20 V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (1 unit) Note2
Total Power Dissipation (2 units) Note2
ID(DC)
ID(pulse)
PT
PT
±8.0 A
±32 A
1.7 W
2.0 W
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg −55 to +150 °C
IAS 8 A
EAS 6.4 mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on ceramic substrate of 2000 mm2 x 2.2 mm
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V
EQUIVALENT CIRCUIT
(1/2 circuit)
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16639EJ1V0DS00 (1st edition)
Date Published November 2003 NS CP(K)
Printed in Japan
2003
1 page  
µ PA2755GR
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
35
ID = 4.0 A
30 Pulsed
VGS = 4.5 V
25
20
15 10 V
10
5
0
-50 -25 0 25 50 75 100 125 150 175
Tch - Channel Temperature - °C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
VGS = 0 V
f = 1 MHz
1000
Ciss
100
Coss
Crss
10
0.1
1 10
VDS - Drain to Source Voltage - V
100
SWITCHING CHARACTERISTICS
1000
VDD = 15 V
VGS = 10 V
RG = 10 Ω
100
td(off)
tr
10 td(on)
tf
1
0.1 1 10
ID - Drain Current - A
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30
ID = 8.0 A
15
25
20 VDD = 24 V
15 V
6V
15
10
10
5
0
0
VDS
VGS
2 4 6 8 10 12
QG - Gate Charge - nC
5
0
14
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
VGS = 10 V
10 4.5 V
0V
1
0.1
0.01
0
Pulsed
0.5 1
VF(S-D) - Source to Drain Voltage - V
1.5
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
VGS = 0 V
di/dt = 100 A/µs
100
10
1
0.1
1
10 100
IF - Diode Forward Current - A
Data Sheet G16639EJ1V0DS
5
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