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What is UPA2781GR?

This electronic component, produced by the manufacturer "NEC", performs the same function as "SWITCHING N- AND P-CHANNEL POWER MOS FET".


UPA2781GR Datasheet PDF - NEC

Part Number UPA2781GR
Description SWITCHING N- AND P-CHANNEL POWER MOS FET
Manufacturers NEC 
Logo NEC Logo 


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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2781GR
SWITCHING
N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE
DESCRIPTION
The µPA2781GR is N-channel Power MOSFET, which built a
Schottky Barrier Diode inside.
This product is designed for synchronous DC/DC converter
application.
PACKAGE DRAWING (Unit: mm)
85
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8: Drain
FEATURES
Built a Schottky Barrier Diode
Low on-state resistance
RDS(on)1 = 7.6 mTYP. (VGS = 10 V, ID = 7 A)
RDS(on)2 = 11.3 mTYP. (VGS = 4.5 V, ID = 7 A)
RDS(on)3 = 12.9 mTYP. (VGS = 4.0 V, ID = 7 A)
Low Ciss: Ciss = 900 pF TYP.
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
µPA2781GR
PACKAGE
Power SOP8
14
5.37 MAX.
6.0 ±0.3
4.4
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.8
0.10
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS (TA = 25°C. All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) [MOSFET]
Drain Current (pulse) Note1
Average Forward Current Note2 [SCHOTTKY]
Total Power Dissipation Note3 [MOSFET]
Total Power Dissipation Note3 [SCHOTTKY]
VGSS
ID(DC)
ID(pulse)
IF(AV)
PT
PT
±20
±13
±52
2.5
2
1
V
A
A
A
W
W
Channel & Junction Temperature
Tch, Tj
150
°C
Storage Temperature
Tstg 55 to + 150 °C
Notes 1. PW 10 µs, Duty Cycle 1%
2. Rectangle wave, 50% Duty Cycle
3. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
Drain
Gate
Gate
Protection
Diode
Source
Schottky
Diode
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16420EJ1V0DS00 (1st edition)
Date Published April 2003 NS CP(K)
Printed in Japan
2002

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UPA2781GR equivalent
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
25
Pulsed
20
VGS = 4.0 V
15 4.5 V
10 10 V
5
0
50 25 0 25 50 75 100 125 150 175
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
100
td(off)
tf
10
td(on)
tr
VDD = 15 V
VGS = 10 V
RG = 10
1
0.1
1
10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
VGS = 0 V
Pulsed
TA = 25°C
125°C
10
1
0.1
0
0.2 0.4 0.6 0.8
1
VF(S-D) - Source to Drain Voltage - V
1.2
µ PA2781GR
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
VGS = 0 V
f = 1 MHz
1000
100
Ciss
Coss
Crss
10
0.01
0.1 1 10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40 8
35
30 VDD = 24 V
15 V
25 6 V
VGS
7
6
5
20 4
15 3
10 2
5 VDS
1
ID = 13 A
00
0 2 4 6 8 10 12 14 16 18 20
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE REVERSE CURRENT
100000
10000
1000
100
10
30 V
VDS = 24 V
1
0.1
0.01
-50
0 50 100
Tj - Junction Temperature - °C
150
Data Sheet G16420EJ1V0DS
5


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Featured Datasheets

Part NumberDescriptionMFRS
UPA2781GRThe function is SWITCHING N- AND P-CHANNEL POWER MOS FET. NECNEC

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