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What is UPA2700GR?

This electronic component, produced by the manufacturer "NEC", performs the same function as "SWITCHING N- AND P-CHANNEL POWER MOS FET".


UPA2700GR Datasheet PDF - NEC

Part Number UPA2700GR
Description SWITCHING N- AND P-CHANNEL POWER MOS FET
Manufacturers NEC 
Logo NEC Logo 


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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA2700GR
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The µPA2700GR is N-Channel MOS Field Effect Transistor
designed for DC/DC converters and power management
applications of notebook computers.
FEATURES
Low on-state resistance
RDS(on)1 = 5.3 mMAX. (VGS = 10 V, ID = 9.0 A)
RDS(on)2 = 7.3 mMAX. (VGS = 4.5 V, ID = 9.0 A)
Low Ciss: Ciss = 2600 pF TYP. (VDS = 10 V, VGS = 0 V)
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
µPA2700GR
PACKAGE
Power SOP8
PACKAGE DRAWING (Unit: mm)
85
1, 2, 3 ; Source
4 ; Gate
5, 6, 7, 8 ; Drain
14
5.37 MAX.
6.0 ±0.3
4.4
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.8
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation (TA = 25°C) Note2
ID(DC)
ID(pulse)
PT
±17
±68
2.0
A
A
W
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg –55 to + 150 °C
IAS 17
A
EAS 28.9 mJ
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Source
Notes 1. PW 10 µs, Duty Cycle 1%
2. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 , L = 100 µH, VGS = 20 0 V
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible,
and quickly dissipate it once, when it has occurred.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15672EJ2V0DS00 (2nd edition)
Date Published May 2002 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
2002

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UPA2700GR equivalent
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
Pulsed
15
10 VGS = 4 V
4.5 V
5 10 V
0
50 25 0 25 50 75 100 125 150
Tch - Channel Temperature - ˚C
10000
1000
100
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
Ciss
Coss
Crss
VGS = 0 V
10 f = 1 MHz
0.1
1
10
VDS - Drain to Source Voltage - V
100
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/ µs
VGS = 0 V
100
10
1
0.1
1 10
ID - Drain Current - A
100
µPA2700GR
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
VGS = 0 V
10
1
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source to Drain Voltage - V
1.4
1000
SWITCHING CHARACTERISTICS
100
10
td(off)
tr
tf
td(on)
VDD = 15 V
VGS = 10 V
1 RG = 10
0.1
1
10
ID - Drain Current - A
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40 8
35
30 VDD = 24 V
15 V
25 6 V
VGS
7
6
5
20 4
15 3
10 2
5 VDS
1
ID = 17 A
00
0 4 8 12 16 20 24 28 32 36 40
QG - Gate Charge - nC
Data Sheet G15672EJ2V0DS
5


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Featured Datasheets

Part NumberDescriptionMFRS
UPA2700GRThe function is SWITCHING N- AND P-CHANNEL POWER MOS FET. NECNEC

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