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What is UPA2701TP?

This electronic component, produced by the manufacturer "NEC", performs the same function as "SWITCHING N- AND P-CHANNEL POWER MOS FET".


UPA2701TP Datasheet PDF - NEC

Part Number UPA2701TP
Description SWITCHING N- AND P-CHANNEL POWER MOS FET
Manufacturers NEC 
Logo NEC Logo 


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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA2701TP
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The µPA2701TP, which has a heat spreader, is N-Channel
MOS Field Effect Transistor designed for DC/DC converter and
power management applications of notebook computers.
PACKAGE DRAWING (Unit: mm)
85
1, 2, 3
; Source
4 ; Gate
5, 6, 7, 8, 9 ; Drain
FEATURES
Low on-state resistance
RDS(on)1 = 7.5 mMAX. (VGS = 10 V, ID = 7.0 A)
RDS(on)2 = 11.6 mMAX. (VGS = 4.5 V, ID = 7.0 A)
Low Ciss: Ciss = 1200 pF TYP. (VDS = 10 V, VGS = 0 V)
Small and surface mount package (Power HSOP8)
14
5.2
+0.17
–0.2
0.8 ±0.2
S
6.0 ±0.3
4.4 ±0.15
1.27 TYP.
0.40
+0.10
–0.05
14
0.12 M
0.10 S
ORDERING INFORMATION
PART NUMBER
µPA2701TP
PACKAGE
Power HSOP8
2.0 ±0.2
9
4.1 MAX.
85
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless otherwise noted, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (DC) (TA = 25°C) Note1
Drain Current (pulse) Note2
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) Note1
VGSS
ID(DC)1
ID(DC)2
ID(pulse)
PT1
PT2
±20
±35
±16
±80
28
3
V
A
A
A
W
W
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Channel Temperature
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tch 150 °C
Tstg –55 to +150 °C
IAS 18
A
EAS 32.4 mJ
Gate
Protection
Diode
Source
Notes 1. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec
2. PW 10 µs, Duty Cycle 1%
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 , L = 100 µH, VGS = 20 0 V
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is extemally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15844EJ2V0DS00 (2nd edition)
Date Published May 2002 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
2002

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UPA2701TP equivalent
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
Pulsed
15
VGS = 4 V
4.5 V
10
10 V
5
0
50 25 0 25 50 75 100 125 150 175
Tch - Channel Temperature - ˚C
10000
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
1000
100
Ciss
Coss
Crss
VGS = 0 V
10 f = 1 MHz
0.1
1
10
VDS - Drain to Source Voltage - V
100
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/ µs
VGS = 0 V
100
10
1
0.1
1 10
IF - Drain Current - A
100
µPA2701TP
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
VGS = 0 V
10
1
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0
VSD - Source to Drain Voltage - V
1.2
SWITCHING CHARACTERISTICS
100
td(off)
tf
10
tr
td(on)
VDD = 15 V
VGS = 10 V
RG = 10
1
0.1
1
10
ID - Drain Current - A
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40 8
35
30 VDD = 24 V
15 V
25 6 V
20
7
6
5
VGS 4
15 3
10 2
5 VDS
1
ID = 14 A
00
0 2 4 6 8 10 12 14 16 18 20
QG - Gate Charge - nC
Data Sheet G15844EJ2V0DS
5


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Part NumberDescriptionMFRS
UPA2701TPThe function is SWITCHING N- AND P-CHANNEL POWER MOS FET. NECNEC

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