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PDF UPA2706TP Data sheet ( Hoja de datos )
| Número de pieza | UPA2706TP | |
| Descripción | SWITCHING N- AND P-CHANNEL POWER MOS FET | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2706TP
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The µ PA2706TP, which has a heat spreader, is N-channel
MOS Field Effect Transistor designed for DC/DC converter
and power management application of notebook computer.
ORDERING INFORMATION
PART NUMBER
PACKAGE
µ PA2706TP
Power HSOP8
FEATURES
• Low on-state resistance
RDS(on)1 = 15 mΩ MAX. (VGS = 10 V, ID = 5.5 A)
RDS(on)2 = 22.5 mΩ MAX. (VGS = 4.5 V, ID = 5.5 A)
• Low Ciss: Ciss = 660 pF TYP. (VDS = 10 V, VGS = 0 V)
• Small and surface mount package (Power HSOP8)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless otherwise noted, all terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (DC) Note1
Drain Current (pulse) Note2
ID(DC)1
ID(DC)2
ID(pulse)
±20
±11
±44
A
A
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation Note1
PT1
PT2
15 W
3W
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg
−55 to +150
°C
IAS 11 A
EAS 12.1 mJ
Notes 1. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm, PW = 10 sec
2. PW ≤ 10 µs, Duty Cycle ≤ 1%
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V
Caution Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16621EJ1V0DS00 (1st edition)
Date Published January 2004 NS CP(K)
Printed in Japan
2003
1 page  
µ PA2706TP
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
Pulsed
35
30 VGS = 4.0 V
25
20 4.5 V
15 10 V
10
5
0
-50 0 50 100 150
Tch - Channel Temperature - °C
1000
100
10
SWITCHING CHARACTERISTICS
VDD = 15 V
VGS = 10 V
RG = 10 Ω
tf
td(off)
td(on)
1
0.1
tr
1 10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
10 VGS = 10 V
0V
1
0.1
0.01
0
0.2 0.4 0.6 0.8 1
VF(S-D) - Source to Drain Voltage - V
1.2
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
Ciss
100
Coss
Crss
VGS = 0 V
f = 1 MHz
10
0.01
0.1
1
10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30 6
VDD = 24 V
25 15 V
6V
20
5
4
15 VGS 3
10 2
5 VDS 1
ID = 11 A
00
02468
QG - Gate Charge - nC
1000
100
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
VGS = 0 V
di/dt = 100 A/µs
10
1
1 10 100
IF - Diode Forward Current - A
Data Sheet G16621EJ1V0DS
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet UPA2706TP.PDF ] | |
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