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PDF SPW11N80C3 Data sheet ( Hoja de datos )

Número de pieza SPW11N80C3
Descripción Cool MOS Power Transistor
Fabricantes Infineon Technologies 
Logotipo Infineon Technologies Logotipo



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CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
SPW11N80C3
Product Summary
V DS
R DS(on)max @ Tj = 25°C
Q g,typ
800 V
0.45
64 nC
PG-TO247-3
CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application (i.e. active clamp forward)
Type
SPW11N80C3
Package
PG-TO247-3
Marking
11N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Pulsed drain current2)
I D,pulse
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
E AS
E AR
I AR
dv /dt
Gate source voltage
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=2.2 A, V DD=50 V
I D=11 A, V DD=50 V
V DS=0…640 V
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
Mounting torque
M2.5 screws
Rev. 2.91
page 1
Value
11
7.1
33
470
0.2
11
50
±20
±30
156
-55 ... 150
50
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2011-09-27

1 page




SPW11N80C3 pdf
5 Typ. output characteristics
I D=f(V DS); T j=150 °C; t p =10 µs
parameter: V GS
21
18
20 V
10 V
6V
15
5.5 V
12
9
5V
6
4.5 V
3
SPW11N80C3
6 Typ. drain-source on-state resistance
R DS(on)=f(I D); T j=150 °C
parameter: V GS
2
1.8
1.6
1.4
1.2 4 V 4.5 V 5 V
10 V
6.5 V
20 V
6V
0
0 5 10 15
V DS [V]
7 Drain-source on-state resistance
R DS(on)=f(T j); I D=7.1 A; V GS=10 V
20
1.2
1
0.8
1
25 0 5 10 15 20 25
I D [A]
8 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max; t p=10 µs
parameter: T j
40
25 °C
30
30
0.6
98 %
typ
0.4
0.2
20
10
150 °C
0
-60 -20 20
60 100 140 180
T j [°C]
0
0 2 4 6 8 10
V GS [V]
Rev. 2.91
page 5
2011-09-27

5 Page










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