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PDF UF28100V Data sheet ( Hoja de datos )
| Número de pieza | UF28100V | |
| Descripción | RF MOSFET Power Transistor | |
| Fabricantes | Tyco Electronics | |
| Logotipo |  |
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* an AMP company
RF MOSFET Power Transistor, IOOW, 28V
100 - 500 MHz
UF281 OOV
Features
l N-Channel Enhancement &lode Device
l DMOS Structure
l Lower Capacitances for Broadband Operation
l High Saturated Output Power
l Lower Noise Figure Than Competitive Devices
v2.00
Absolute Maximum Ratings at 25°C
I Parameter
( Symbol 1 Rating
( Units
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation
VDS
V GS
‘DS
PD
65
20
12
250
V
V
A
W
JunctionTemperature
TJ 200 “C
Storage Temperature
Thermal Resistance
T sic
8 IP
-55 to +150
0.7
“C
“crw
_E_l_e__c..t_r~ic~al Characteristics at 25°C
Parameter
Symbol
Min Max Units
lest Conditions
Drain-Source Breakdown Voltage
BV,,, 65 - V V,.=O.O V. I& 5.0 mA
Drain-Source LeakageCurrent
Gate-Source Leakage Current
Gate Threshold Voltage
IDSS
‘GSS
V GSIW
3.0 mA V,,=28.0 V, V,,=O.O V’
,,
) 3.0 ] fl 1 v,,=2ov, vDs=o.o v
2.0
I
6.0 V
I V,,=lO.O V, 1,,=300.0 mA‘
ForwardTransconductance
GM 1.5 - S V,,=10.0 V, 1,,=3000.0 mA, AV,,=l .O V, 80 us Pulse’
input Capacitance
c 15s
- 135 pF V,,=28.0 V, F=l .O MHz’
Output Capacitance
Reverse Capacitance
Cass
C RSS
90 PF V,,=28.0 V, F=l .O MHz’
24 pF V,,=28.0 V, F=l .O MHz’
Power Gain
Drain Efficiency
.
Load Mismatch Tolerance
GP
VSWR-T
10 - dB V,,=28.0 V, 1,,=600.0 mA, P,,$OO.O W, F=SOO MHz
50 - % V,,=28.0 V, 1,,=600.0 mA, P,,,=lOO.O W. F=500 MHZ
- 3O:l - V,,=28.0 V, lDD=800.0 mA, PbbylOO.0 W, F=500 MHz
- Per Side
Specifications Subject to Change Wiihout Notice.
M/A-COM, Inc.
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet UF28100V.PDF ] | |
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