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PDF UF28100M Data sheet ( Hoja de datos )
| Número de pieza | UF28100M | |
| Descripción | RF MOSFET Power Transistor | |
| Fabricantes | Tyco Electronics | |
| Logotipo |  |
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an AMP company
RF MOSFET Power
100 - 500 MHz
Transistor,
Features
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Competitive Devices
lOOW, 28V
UF281 OOM
Absolute Maximum Ratings at 25°C
pi
Power Dissipation
JunctionTemperature
Storage Temperature
Thermal Resistance
PD
T,
T STG
EJl O
250
200
-55 to +150
0.7
W
“C
“C
“Ciw
Electrical Characteristics
I Parameter
Drain-Source Breakdown Voltage
Drain-Source LeakageCurrent
Gate-Source Leakage Current
Gate Threshold Voltage
ForwardTransconductance
input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Return Loss
Load Mismatch Tolerance
at 25°C
I4
&w
t.74
.m4 1 ale
II
505
a&b,
am 1 a?4
P m a¶ ooc 1 ace
( Symbol 1 Min 1 Max 1 Units 1
Test Conditions
BVDSS
‘OS5
‘GSS
V
GSCTHI
GM
C ISS
C OS.5
C RSS
%
65
2.0
1.5
10
50
- V V,,=O.O V, I,,=150 mA’
I
3.0 mA v,,=2a.o v. vo,=o.o v
3.0 pA v,,=20 v, v,,=o.o V’
6.0 V V,,=lO.O V, 1,,=300.0 mA‘
- S V,,=lO.O V, 1,,=3000.0 mA, ~v,,=l.OV, 80 ps Pulse’
135 pF v,=2a.o v, F=l .o MHz’
90 pF V,s=28.0 V, F=l .O MHz’
24 pF v,,=2a.ovF,=I .OMHZ*
- dB V,-,-=28.0 V, 1,,=600.0 mA, P,,=lOO.O W. F=500 MHz
- % v,,=%.O V, 1,,=600.0 mA, P,,=lOO.O W, F=500 MHz
10 - dB V,,=28.0 V, 1,,=600.0 mA, PO,,=1 00.0 W, F=500 MHz
VSWR-T
- 3O:l - v,,=28.0 V. 1,,=600.0 mA, P,,,.=100.0 W, F=500 MHz
1
I
* Per Side
Specifications Subject to Change Without Notice.
M/A-COM, inc.
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet UF28100M.PDF ] | |
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