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What is GT60M323?

This electronic component, produced by the manufacturer "Toshiba", performs the same function as "Silicon N Channel IGBT".


GT60M323 Datasheet PDF - Toshiba

Part Number GT60M323
Description Silicon N Channel IGBT
Manufacturers Toshiba 
Logo Toshiba Logo 


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GT60M323
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60M323
Voltage Resonance Inverter Switching Application
Enhancement mode type
High speed
: tf = 0.09 µs (typ.) (IC = 60 A)
Low saturation voltage : VCE (sat) = 2.3 V (typ.) (IC = 60 A)
FRD included between emitter and collector
TO-3P(LH) (Toshiba package name)
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Continuous collector @ Tc = 100°C
current
@ Tc = 25°C
Pulsed collector current
DC
Diode forward current
Pulsed
Collector power
dissipation
@ Tc = 100°C
@ Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCES
VGES
IC
ICP
IF
IFP
PC
Tj
Tstg
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Symbol
Rth (j-c)
Rth (j-c)
Rating
900
±25
31
60
120
15
120
80
200
150
55 to 150
Unit
V
V
A
A
A
W
°C
°C
Max
0.625
4.0
Unit
°C/W
°C/W
JEDEC
JEITA
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
Equivalent Circuit
Collector
Gate
Emitter
Marking
TOSHIBA
GT60M323
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1 2004-07-06

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GT60M323 equivalent
ICmax – Tc
70
Common emitter
60 VGE = 15 V
50
40
30
20
10
0
25 50 75 100 125 150
Case temperature Tc (°C)
GT60M323
102
Tc = 25°C
101
100
Rth (t) – tw
Diode stage
IGBT stage
101
102
105
104
103
102
101
100
101
102
Pulse width tw (s)
100
Common
collector
80
IF – VF
60
40
Tc = 125°C
20
25
40
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Forward voltage VF (V)
1.6
Common Collector
di/dt = −20 A/µs
Tc = 25°C
1.4
trr, Irr – IF
1.2
trr
Irr
18
16
14
1.0 12
0.8 10
0 20 40 60 80
Forward current IF (A)
1.6
trr
1.2
trr, Irr – di/dt
Common collector
IF = 60 A
Tc = 25°C
80
60
0.8 40
0.4
Irr
0.0
0 40
20
0
80 120 160 180
di/dt (A/µs)
5
2004-07-06


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GT60M323 electronic component.


Information Total 6 Pages
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Download [ GT60M323.PDF Datasheet ]

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Featured Datasheets

Part NumberDescriptionMFRS
GT60M322The function is Silicon N Channel IGBT. ToshibaToshiba
GT60M323The function is Silicon N Channel IGBT. ToshibaToshiba
GT60M324The function is SILICON N CHANNEL IGBT. ToshibaToshiba

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