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PDF BD410 Data sheet ( Hoja de datos )
| Número de pieza | BD410 | |
| Descripción | NPN Epitaxial Silicon Power Transistor | |
| Fabricantes | Continental | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BD410 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN EPITAXIAL SILICON POWER TRANSISTOR
IS/ISO 9002
Lic# QSC/L- 000019.2
BD410
TO-126
Plastic Package
ECB
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Continuous Collector Current
Peak Collector Current
Total Power Dissipation @ Ta=25 ºC
@ Tc=25 ºC
Storage Temperature Range
Lead Temperature 1.6mm from Case for
10 Seconds.
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tj, Tstg
TL
VALUE
500
325
5.0
1.0
1.5
1.25
20
- 55 to +125
260
UNIT
V
V
V
A
W
ºC
ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless otherwise specified )
DESCRIPTION
Collector Cut off Current
Collector -Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
DC Current Gain
Base Emitter Saturation Voltage
Collector Emitter Saturation Voltage
Dynamic Characteristics
DESCRIPTION
Output Capacitance
Input Capacitance
SYMBOL
ICES
VCBO
VCEO *
VEBO
hFE
VBE (Sat)
VCE (Sat)
TEST CONDITION
VCE=300V, IB=0
IC=500µA, IE=0
IC=10mA, IB=0
IE=50µA, IC=0
IC=5mA, VCE=10V
IC=50mA, VCE=10V
IC=100mA, VCE=10V
IC=100mA, IB=10mA
IC=100mA, IB=10mA
MIN
500
325
5
25
30
20
SYMBOL TEST CONDITION
Cobo
Cibo
IE=0, VCB=10V, f=1MHz
IE=0, VEB=0.5V, f=1MHz
MIN
*Pulsed Test tp=300µs,Duty Cycle<2%
TYP MAX UNIT
100 µA
V
V
V
240
1.5 V
0.5 V
TYP MAX UNIT
5.5 pF
90 pF
Continental Device India Limited
Data Sheet
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BD410.PDF ] | |
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