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PDF UAA3535HL Data sheet ( Hoja de datos )

Número de pieza UAA3535HL
Descripción Low power GSM/DCS/PCS multi-band transceiver
Fabricantes Philips 
Logotipo Philips Logotipo



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INTEGRATED CIRCUITS
DATA SHEET
UAA3535HL
Low power GSM/DCS/PCS
multi-band transceiver
Objective specification
File under Integrated Circuits, IC17
2000 Feb 17

1 page




UAA3535HL pdf
Philips Semiconductors
Low power GSM/DCS/PCS multi-band transceiver
Objective specification
UAA3535HL
handbook, full pagewidth
TXCPO 1
VCC(TXCP) 2
TXIFA 3
IFGND1 4
TSTO 5
VCC1(IF) 6
IA 7
IB 8
QA 9
QB 10
RXON 11
TXON 12
UAA3535HL
36 IFCIA
35 IFCIB
34 IFCQA
33 IFCQB
32 VCC(RFLO)
31 RFLOIB
30 RFLOIA
29 RFLOGND
28 SYNGND
27 VCC(SYN)
26 VCC(RFCP)
25 SYNON
FCA068
Fig.2 Pin configuration.
FUNCTIONAL DESCRIPTION
RF receiver
The receiver front-end converts the aerial RF signal from
EGSM (Extended GSM; 925 to 960 MHz), DCS
(1805 to 1880 MHz) or PCS (1930 to 1990 MHz) bands
down to an IF signal of 100 kHz. The first stages are
symmetrical LNAs that are matched to 50 using external
baluns. The LNAs are followed by an I/Q down-mixer.
The I/Q down-mixer consists of two mixers in parallel but
driven by quadrature out of phase LO signals.
The In-phase (I) and Quadrature- phase (Q) IF signals are
then low-pass filtered to provide protection from high
frequency offset interferers. The IF I and Q signals are
then fed into the channel filter.
Channel filter and AGC
The front-end IF I and Q outputs are first applied to an
amplifier circuit with provision for three 8 dB gain step
adjustment possibilities and then to an integrated
band-pass channel filter. The filter is a fifth-order
band-pass filter centred around 100 with 220 kHz
bandwidth. After filtering the IF I and Q signals are further
amplified with provision for eleven 4 dB gain steps and
DC offset compensation.
I/Q modulator
I and Q baseband signals are applied to the I/Q modulator
where the modulation spectrum is shifted up to the
transmit IF frequency. For low harmonic distortion, low
carrier leakage and high image rejection, the phase error
must be kept as small as possible. The IF output of the
modulator is fed to an integrated low-pass filter where
unwanted spurious signals are suppressed, prior to being
fed to the phase detector.
2000 Feb 17
5

5 Page





UAA3535HL arduino
Philips Semiconductors
Low power GSM/DCS/PCS multi-band transceiver
Objective specification
UAA3535HL
LIMITING VALUES
SYMBOL
VCC
VCC(TXCP);
VCC(RFCP)
Pmax
Tamb
Tstg
DESCRIPTION
supply voltage
supply voltage for RX and TX charge pumps
maximum power dissipation
ambient temperature
storage temperature
MIN.
0.3
0.3
MAX.
+3.6
+4.25
UNIT
V
V
1W
30 +70 °C
40 +150 °C
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-c)
PARAMETER
thermal resistance from junction to case
VALUE
65
UNIT
K/W
DC CHARACTERISTICS
VCC = VCC(TXCP) = VCC(RFCP) = 2.6 V; Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICC
VCC(RF)
ICC(RF)
VCC1(IF)
ICC1(IF)
VCC2(IF)
ICC2(IF)
supply current
RF front-end and transmit
modulation loop supply
voltage
RF front-end and transmit
modulation loop supply
current
IF supply voltage 1
IF supply current 1
IF supply voltage 2
IF supply current 2
normal mode; total power-down;
note 1
preset mode; total power-down;
note 2
RX and SYN mode
TX, TXIF and SYN mode
SYN mode
TXIF and SYN mode
RX mode; one LNA and
quadrature mixer active
RX mode; one LNA active
TX mode; transmit modulation
loop active without charge pump
RX mode; I/Q low IF band-pass
filter active
TX mode; I/Q modulator active
RX mode; I/Q AGC active
TXIF mode; TX IF VCO active
MIN.
2.4
2.4
2.4
TYP.
10
100
51.5
54
17
29
17
6
6
7
9
4
9
MAX.
50
200
60
66
20
37
3.3
3.3
3.3
UNIT
µA
µA
mA
mA
mA
mA
V
mA
mA
mA
V
mA
mA
V
mA
mA
2000 Feb 17
11

11 Page







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