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Datasheet SP2209E Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1SP2209EHigh ESD Dual Port RS-232 Transceiver

SP2209E High ESD Dual Port RS-232 Transceiver FEATURES ■ Meets True EIA/TIA-232-F Standards ■ Complies with 89/336/EEC EMC Directive ■ Single +12V Power Supply ■ <5mA Low Power CMOS Operation ■ 100µA Low Standby Current ■ Operates With +3V or +5V Logic ■ Provides +3.3V to +5V Standby
Exar
Exar		transceiver
2SP2209EHigh ESD Dual Port RS-232 Transceiver

® SP2209E High ESD Dual Port RS-232 Transceiver s Meets True EIA/TIA-232-F Standards s Complies with 89/336/EEC EMC Directive s Single +12V Power Supply s <5mA Low Power CMOS Operation s 100µA Low Standby Current s Operates With +3V Or +5V Logic s Allows +3.3V to +5V Standby Supply s Two Complet
Sipex
Sipex		transceiver


SP2 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1SP200+5V High-Speed RS-232 Transceivers with 0.1mF Capacitors

® SP200/204/205/206/207/208/211/213 +5V High–Speed RS-232 Transceivers with 0.1µF Capacitors ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 0.1µF External Charge Pump Capacitors 120kbps Data Rate Standard SOIC and SSOP Packages Multiple Drivers and Receivers Single 5V Supply Operation 1µA Shutdown
Sipex
Sipex		transceiver
2SP200F(SP200F / SP250F) Rectifier Stacks

12,500 V - 25,000 V Rectifier Stacks 0.5 A Forward Current 150 ns Recovery Time SP125F SP150F SP200F SP250F ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage (Vrwm) Average Rectified Current (in oil) (Io) 55°C Volts SP125F SP150F SP200F SP250F
VMI
VMI		rectifier
3SP200S(SP200S / SP250S) Rectifier Stacks

15,000 V - 30,000 V Rectifier Stacks 0.5 A Forward Current 3000 ns Recovery Time SP150S SP200S SP250S SP300S ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage (Vrwm) Average Rectified Current (in oil) (Io) 55°C Volts SP150S SP200S SP250S SP300
VMI
VMI		rectifier
4SP201SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

polyfet rf devices SP201 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and o
Polyfet RF Devices
Polyfet RF Devices		transistor
5SP20100R20.0 Amp Schottky Barrier Rectifiers

Elektronische Bauelemente SP20100R Voltage 100V 20.0 Amp Schottky Barrier Rectifiers RoHS Compliant Product A suffix of “-C” specifies halogen free FEATURES  Low forward voltage drop  High current capability  High reliability  High surge current capability  Epitaxial constructi
SeCoS
SeCoS		rectifier
6SP2013P-Channel Enhancement Mode Field Effect Transistor

Green Product SP2013 Ver 1.1 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 20 @ VGS=-4.5V 21 @ VGS=-4.0V -20V -8.5A 22 @ VGS=-3.7V 25 @ VGS=-3.1V 28 @ VGS=-2.5V FEATURES Super high dense cell design for low R DS(O
SamHop
SamHop		transistor
7SP20150VOLTAGE 150V 20.0AMP Schottky Barrier Rectifiers

SP20150 Elektronische Bauelemente VOLTAGE 150V 20.0AMP Schottky Barrier Rectifiers RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free ITO-220 FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction
SeCoS
SeCoS		rectifier



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nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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